PMPB29XNE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PMPB29XNE
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.7 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 17 nS
Cossⓘ - Capacitancia de salida: 110 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.033 Ohm
Paquete / Cubierta: DFN2020MD-6
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PMPB29XNE Datasheet (PDF)
pmpb29xne.pdf

PMPB29XNE30 V, single N-channel Trench MOSFET26 November 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.2. Features and benefits 1 kV ESD protection Small and leadless ultra thin SMD plastic pack
pmpb29xnea.pdf

PMPB29XNEA30 V, N-channel Trench MOSFET10 September 2018 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flank
pmpb29xpea.pdf

PMPB29XPEA20 V, P-channel Trench MOSFET27 March 2018 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks fo
pmpb29xpe.pdf

PMPB29XPE20 V, single P-channel Trench MOSFET5 December 2012 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features and benefits 2.3 kV ESD protected Small and leadless ultra
Otros transistores... PMPB16XN , PMPB19XP , PMPB20EN , PMPB20UN , PMPB20XPE , PMPB215ENEA , PMPB23XNE , PMPB27EP , 4N60 , PMPB29XPE , PMPB33XN , PMPB33XP , PMPB40SNA , PMPB43XPE , PMPB47XP , PMPB48EP , PMPB85ENEA .
History: AUIRFZ44NL | SRC65R220BS | SSF2814E | SSF2810EH2 | AP02N60P-HF | MT4435ACTR
History: AUIRFZ44NL | SRC65R220BS | SSF2814E | SSF2810EH2 | AP02N60P-HF | MT4435ACTR



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