PMPB29XNE MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PMPB29XNE

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 17 nS

Cossⓘ - Capacitancia de salida: 110 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.033 Ohm

Encapsulados: DFN2020MD-6

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PMPB29XNE datasheet

 ..1. Size:258K  nxp
 pmpb29xne.pdf pdf_icon

PMPB29XNE

PMPB29XNE 30 V, single N-channel Trench MOSFET 26 November 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits 1 kV ESD protection Small and leadless ultra thin SMD plastic pack

 0.1. Size:288K  nxp
 pmpb29xnea.pdf pdf_icon

PMPB29XNE

PMPB29XNEA 30 V, N-channel Trench MOSFET 10 September 2018 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flank

 7.1. Size:278K  nxp
 pmpb29xpea.pdf pdf_icon

PMPB29XNE

PMPB29XPEA 20 V, P-channel Trench MOSFET 27 March 2018 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks fo

 7.2. Size:233K  nxp
 pmpb29xpe.pdf pdf_icon

PMPB29XNE

PMPB29XPE 20 V, single P-channel Trench MOSFET 5 December 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 2.3 kV ESD protected Small and leadless ultra

MOSTRAR MÁS

Otros transistores... PMPB16XN, PMPB19XP, PMPB20EN, PMPB20UN, PMPB20XPE, PMPB215ENEA, PMPB23XNE, PMPB27EP, 12N60, PMPB29XPE, PMPB33XN, PMPB33XP, PMPB40SNA, PMPB43XPE, PMPB47XP, PMPB48EP, PMPB85ENEA