All MOSFET. PMPB29XNE Datasheet

 

PMPB29XNE Datasheet and Replacement


   Type Designator: PMPB29XNE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
   Package: DFN2020MD-6
 

 PMPB29XNE substitution

   - MOSFET ⓘ Cross-Reference Search

 

PMPB29XNE Datasheet (PDF)

 ..1. Size:258K  nxp
 pmpb29xne.pdf pdf_icon

PMPB29XNE

PMPB29XNE30 V, single N-channel Trench MOSFET26 November 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.2. Features and benefits 1 kV ESD protection Small and leadless ultra thin SMD plastic pack

 0.1. Size:288K  nxp
 pmpb29xnea.pdf pdf_icon

PMPB29XNE

PMPB29XNEA30 V, N-channel Trench MOSFET10 September 2018 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flank

 7.1. Size:278K  nxp
 pmpb29xpea.pdf pdf_icon

PMPB29XNE

PMPB29XPEA20 V, P-channel Trench MOSFET27 March 2018 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks fo

 7.2. Size:233K  nxp
 pmpb29xpe.pdf pdf_icon

PMPB29XNE

PMPB29XPE20 V, single P-channel Trench MOSFET5 December 2012 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features and benefits 2.3 kV ESD protected Small and leadless ultra

SHOW MORE

Datasheet: PMPB16XN , PMPB19XP , PMPB20EN , PMPB20UN , PMPB20XPE , PMPB215ENEA , PMPB23XNE , PMPB27EP , 4N60 , PMPB29XPE , PMPB33XN , PMPB33XP , PMPB40SNA , PMPB43XPE , PMPB47XP , PMPB48EP , PMPB85ENEA .

History: STF57N65M5 | IPB34CN10N | FQD2N50TF | CTD04N004 | AP6679GS-A | P2610BT | DMN3035LWN

Keywords - PMPB29XNE MOSFET datasheet

 PMPB29XNE cross reference
 PMPB29XNE equivalent finder
 PMPB29XNE lookup
 PMPB29XNE substitution
 PMPB29XNE replacement

 

 
Back to Top

 


 
.