PMV16XN Todos los transistores

 

PMV16XN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PMV16XN
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.51 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 6.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 24 nS
   Cossⓘ - Capacitancia de salida: 145 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: TO-236AB
 

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PMV16XN Datasheet (PDF)

 ..1. Size:255K  nxp
 pmv16xn.pdf pdf_icon

PMV16XN

PMV16XN20 V, N-channel Trench MOSFET11 November 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power diss

 9.1. Size:1631K  nxp
 pmv160up.pdf pdf_icon

PMV16XN

PMV160UP20 V, 1.2 A P-channel Trench MOSFETRev. 2 6 December 2011 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits 1.8 V RDSon rated Trench MOSFET technology Very fast

 9.2. Size:270K  nxp
 pmv164enea.pdf pdf_icon

PMV16XN

PMV164ENEA60 V, N-channel Trench MOSFET7 May 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology El

 9.3. Size:348K  tysemi
 pmv160up.pdf pdf_icon

PMV16XN

Product specificationPMV160UP20 V, 1.2 A P-channel Trench MOSFETRev. 2 6 December 2011 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits 1.8 V RDSon rated Trench MOSFET tec

MOSTRAR MÁS

Otros transistores... PMPB48EP , PMPB85ENEA , PMPB95ENEA , PMR290UNE , PMR670UPE , PMT200EN , PMT760EN , PMV130ENEA , IRFP250 , PMV20EN , PMV20XNE , PMV250EPEA , PMV27UPE , PMV30UN2 , PMV37EN2 , PMV40UN2 , PMV45EN2 .

 

 
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