PMV16XN MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PMV16XN

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.51 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 6.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 24 nS

Cossⓘ - Capacitancia de salida: 145 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm

Encapsulados: TO-236AB

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PMV16XN datasheet

 ..1. Size:255K  nxp
 pmv16xn.pdf pdf_icon

PMV16XN

PMV16XN 20 V, N-channel Trench MOSFET 11 November 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power diss

 9.1. Size:1631K  nxp
 pmv160up.pdf pdf_icon

PMV16XN

PMV160UP 20 V, 1.2 A P-channel Trench MOSFET Rev. 2 6 December 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 1.8 V RDSon rated Trench MOSFET technology Very fast

 9.2. Size:270K  nxp
 pmv164enea.pdf pdf_icon

PMV16XN

PMV164ENEA 60 V, N-channel Trench MOSFET 7 May 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology El

 9.3. Size:348K  tysemi
 pmv160up.pdf pdf_icon

PMV16XN

Product specification PMV160UP 20 V, 1.2 A P-channel Trench MOSFET Rev. 2 6 December 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 1.8 V RDSon rated Trench MOSFET tec

MOSTRAR MÁS

Otros transistores... PMPB48EP, PMPB85ENEA, PMPB95ENEA, PMR290UNE, PMR670UPE, PMT200EN, PMT760EN, PMV130ENEA, IRFP250, PMV20EN, PMV20XNE, PMV250EPEA, PMV27UPE, PMV30UN2, PMV37EN2, PMV40UN2, PMV45EN2