All MOSFET. PMV16XN Datasheet

 

PMV16XN MOSFET. Datasheet pdf. Equivalent


   Type Designator: PMV16XN
   Marking Code: *BZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.51 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.9 V
   |Id|ⓘ - Maximum Drain Current: 6.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13.4 nC
   trⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 145 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO-236AB

 PMV16XN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PMV16XN Datasheet (PDF)

 ..1. Size:255K  nxp
pmv16xn.pdf

PMV16XN PMV16XN

PMV16XN20 V, N-channel Trench MOSFET11 November 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power diss

 9.1. Size:1631K  nxp
pmv160up.pdf

PMV16XN PMV16XN

PMV160UP20 V, 1.2 A P-channel Trench MOSFETRev. 2 6 December 2011 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits 1.8 V RDSon rated Trench MOSFET technology Very fast

 9.2. Size:270K  nxp
pmv164enea.pdf

PMV16XN PMV16XN

PMV164ENEA60 V, N-channel Trench MOSFET7 May 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology El

 9.3. Size:348K  tysemi
pmv160up.pdf

PMV16XN PMV16XN

Product specificationPMV160UP20 V, 1.2 A P-channel Trench MOSFETRev. 2 6 December 2011 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits 1.8 V RDSon rated Trench MOSFET tec

 9.4. Size:362K  tysemi
pmv16un.pdf

PMV16XN PMV16XN

Product specificationPMV16UN20 V, 5.8 A N-channel Trench MOSFETRev. 1 4 April 2011 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low threshold voltage Trench MOSFET t

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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