PMV16XN Specs and Replacement

Type Designator: PMV16XN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.51 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 145 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: TO-236AB

PMV16XN substitution

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PMV16XN datasheet

 ..1. Size:255K  nxp
 pmv16xn.pdf pdf_icon

PMV16XN

PMV16XN 20 V, N-channel Trench MOSFET 11 November 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power diss... See More ⇒

 9.1. Size:1631K  nxp
 pmv160up.pdf pdf_icon

PMV16XN

PMV160UP 20 V, 1.2 A P-channel Trench MOSFET Rev. 2 6 December 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 1.8 V RDSon rated Trench MOSFET technology Very fast ... See More ⇒

 9.2. Size:270K  nxp
 pmv164enea.pdf pdf_icon

PMV16XN

PMV164ENEA 60 V, N-channel Trench MOSFET 7 May 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology El... See More ⇒

 9.3. Size:348K  tysemi
 pmv160up.pdf pdf_icon

PMV16XN

Product specification PMV160UP 20 V, 1.2 A P-channel Trench MOSFET Rev. 2 6 December 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 1.8 V RDSon rated Trench MOSFET tec... See More ⇒

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Detailed specifications: PMPB48EP, PMPB85ENEA, PMPB95ENEA, PMR290UNE, PMR670UPE, PMT200EN, PMT760EN, PMV130ENEA, IRFP250, PMV20EN, PMV20XNE, PMV250EPEA, PMV27UPE, PMV30UN2, PMV37EN2, PMV40UN2, PMV45EN2

Keywords - PMV16XN MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.