PMV16XN MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: PMV16XN
Маркировка: *BZ
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 0.51 W
Предельно допустимое напряжение сток-исток |Uds|: 20 V
Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
Пороговое напряжение включения |Ugs(th)|: 0.9 V
Максимально допустимый постоянный ток стока |Id|: 6.8 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 13.4 nC
Время нарастания (tr): 24 ns
Выходная емкость (Cd): 145 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.02 Ohm
Тип корпуса: TO-236AB
PMV16XN Datasheet (PDF)
pmv16xn.pdf
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pmv160up.pdf
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pmv164enea.pdf
PMV164ENEA60 V, N-channel Trench MOSFET7 May 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology El
pmv160up.pdf
Product specificationPMV160UP20 V, 1.2 A P-channel Trench MOSFETRev. 2 6 December 2011 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits 1.8 V RDSon rated Trench MOSFET tec
pmv16un.pdf
Product specificationPMV16UN20 V, 5.8 A N-channel Trench MOSFETRev. 1 4 April 2011 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low threshold voltage Trench MOSFET t
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