PMV40UN2 Todos los transistores

 

PMV40UN2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PMV40UN2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.49 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 3.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 23 nS
   Cossⓘ - Capacitancia de salida: 40 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.044 Ohm
   Paquete / Cubierta: TO-236AB
 

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PMV40UN2 Datasheet (PDF)

 ..1. Size:259K  nxp
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PMV40UN2

PMV40UN230 V, N-channel Trench MOSFET24 April 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power dissip

 7.1. Size:241K  philips
 pmv40un.pdf pdf_icon

PMV40UN2

PMV40UNTrenchMOS ultra low level FETRev. 01 05 August 2003 Product dataM3D0881. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:PMV40UN in SOT23.1.2 Features Ultra low level threshold Surface mount package.1.3 Applications Battery management High-speed switch.

 7.2. Size:96K  tysemi
 pmv40un.pdf pdf_icon

PMV40UN2

Product specificationPMV40UNTrenchMOS ultra low level FETRev. 01 05 August 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:PMV40UN in SOT23.1.2 Features Ultra low level threshold Surface mount package.1.3 Applications Battery management Hig

 7.3. Size:848K  cn vbsemi
 pmv40un.pdf pdf_icon

PMV40UN2

PMV40UNwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G

MOSTRAR MÁS

Otros transistores... PMV130ENEA , PMV16XN , PMV20EN , PMV20XNE , PMV250EPEA , PMV27UPE , PMV30UN2 , PMV37EN2 , 7N60 , PMV45EN2 , PMV48XPA , PMV50XP , PMV65XPE , PMV65XPEA , PMV75UP , PMXB120EPE , PMXB350UPE .

History: 2SK2596 | BSO200P03S | TT8K11 | NP82N055NHE

 

 
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