PMV40UN2 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PMV40UN2

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.49 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 3.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 23 nS

Cossⓘ - Capacitancia de salida: 40 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.044 Ohm

Encapsulados: TO-236AB

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PMV40UN2 datasheet

 ..1. Size:259K  nxp
 pmv40un2.pdf pdf_icon

PMV40UN2

PMV40UN2 30 V, N-channel Trench MOSFET 24 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power dissip

 7.1. Size:241K  philips
 pmv40un.pdf pdf_icon

PMV40UN2

PMV40UN TrenchMOS ultra low level FET Rev. 01 05 August 2003 Product data M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability PMV40UN in SOT23. 1.2 Features Ultra low level threshold Surface mount package. 1.3 Applications Battery management High-speed switch.

 7.2. Size:96K  tysemi
 pmv40un.pdf pdf_icon

PMV40UN2

Product specification PMV40UN TrenchMOS ultra low level FET Rev. 01 05 August 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability PMV40UN in SOT23. 1.2 Features Ultra low level threshold Surface mount package. 1.3 Applications Battery management Hig

 7.3. Size:848K  cn vbsemi
 pmv40un.pdf pdf_icon

PMV40UN2

PMV40UN www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) G

MOSTRAR MÁS

Otros transistores... PMV130ENEA, PMV16XN, PMV20EN, PMV20XNE, PMV250EPEA, PMV27UPE, PMV30UN2, PMV37EN2, AO3407, PMV45EN2, PMV48XPA, PMV50XP, PMV65XPE, PMV65XPEA, PMV75UP, PMXB120EPE, PMXB350UPE