PMV40UN2
MOSFET. Datasheet pdf. Equivalent
Type Designator: PMV40UN2
Marking Code: *K8
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.49
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.9
V
|Id|ⓘ - Maximum Drain Current: 3.7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 7
nC
trⓘ - Rise Time: 23
nS
Cossⓘ -
Output Capacitance: 40
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.044
Ohm
Package:
TO-236AB
PMV40UN2
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMV40UN2
Datasheet (PDF)
..1. Size:259K nxp
pmv40un2.pdf
PMV40UN230 V, N-channel Trench MOSFET24 April 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power dissip
7.1. Size:241K philips
pmv40un.pdf
PMV40UNTrenchMOS ultra low level FETRev. 01 05 August 2003 Product dataM3D0881. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:PMV40UN in SOT23.1.2 Features Ultra low level threshold Surface mount package.1.3 Applications Battery management High-speed switch.
7.2. Size:96K tysemi
pmv40un.pdf
Product specificationPMV40UNTrenchMOS ultra low level FETRev. 01 05 August 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:PMV40UN in SOT23.1.2 Features Ultra low level threshold Surface mount package.1.3 Applications Battery management Hig
7.3. Size:848K cn vbsemi
pmv40un.pdf
PMV40UNwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G
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