PMV45EN2 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PMV45EN2

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.51 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 50 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.042 Ohm

Encapsulados: TO-236AB

 Búsqueda de reemplazo de PMV45EN2 MOSFET

- Selecciónⓘ de transistores por parámetros

 

PMV45EN2 datasheet

 ..1. Size:463K  nxp
 pmv45en2.pdf pdf_icon

PMV45EN2

PMV45EN2 30 V, N-channel Trench MOSFET 3 June 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology Enhanced power dissipa

 7.1. Size:238K  philips
 pmv45en.pdf pdf_icon

PMV45EN2

PMV45EN TrenchMOS enhanced logic level FET Rev. 01 15 January 2003 Product data M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability PMV45EN in SOT23. 1.2 Features Surface mount package Fast switching. 1.3 Applications Battery management High speed switch. 1

 7.2. Size:204K  tysemi
 pmv45en.pdf pdf_icon

PMV45EN2

Product specification PMV45EN N-channel TrenchMOS logic level FET Rev. 2 7 November 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications.

 9.1. Size:727K  nxp
 pmv450enea.pdf pdf_icon

PMV45EN2

PMV450ENEA 60 V, N-channel Trench MOSFET 23 March 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic Disc

MOSTRAR MÁS

Otros transistores... PMV16XN, PMV20EN, PMV20XNE, PMV250EPEA, PMV27UPE, PMV30UN2, PMV37EN2, PMV40UN2, 18N50, PMV48XPA, PMV50XP, PMV65XPE, PMV65XPEA, PMV75UP, PMXB120EPE, PMXB350UPE, PMXB360ENEA