PMV45EN2
MOSFET. Datasheet pdf. Equivalent
Type Designator: PMV45EN2
Marking Code: *K9
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.51
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 4.1
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 3.6
nC
trⓘ - Rise Time: 12
nS
Cossⓘ -
Output Capacitance: 50
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.042
Ohm
Package:
TO-236AB
PMV45EN2
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMV45EN2
Datasheet (PDF)
..1. Size:463K nxp
pmv45en2.pdf
PMV45EN230 V, N-channel Trench MOSFET3 June 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology Enhanced power dissipa
7.1. Size:238K philips
pmv45en.pdf
PMV45ENTrenchMOS enhanced logic level FETRev. 01 15 January 2003 Product dataM3D0881. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:PMV45EN in SOT23.1.2 Features Surface mount package Fast switching.1.3 Applications Battery management High speed switch.1
7.2. Size:204K tysemi
pmv45en.pdf
Product specificationPMV45ENN-channel TrenchMOS logic level FETRev. 2 7 November 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications.
9.1. Size:727K nxp
pmv450enea.pdf
PMV450ENEA60 V, N-channel Trench MOSFET23 March 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic Disc
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