PMZB370UNE Todos los transistores

 

PMZB370UNE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PMZB370UNE
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.36 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 0.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 9 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.49 Ohm
   Paquete / Cubierta: DFN1006B-3
 

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PMZB370UNE Datasheet (PDF)

 ..1. Size:968K  nxp
 pmzb370une.pdf pdf_icon

PMZB370UNE

PMZB370UNE30 V, single N-channel Trench MOSFETRev. 1 8 May 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Ultra thin package

 9.1. Size:220K  nxp
 pmzb320upe.pdf pdf_icon

PMZB370UNE

PMZB320UPE30 V, P-channel Trench MOSFET24 March 2015 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching

 9.2. Size:215K  nxp
 pmzb390une.pdf pdf_icon

PMZB370UNE

PMZB390UNE30 V, N-channel Trench MOSFET12 March 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Very fast switching Low threshold voltage Trench MOSFET technology

 9.3. Size:205K  nxp
 pmzb300xn.pdf pdf_icon

PMZB370UNE

PMZB300XN20 V, single N-channel Trench MOSFET1 August 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.1.2 Features and benefits Fast switching Trench MOSFET technology Low

MOSTRAR MÁS

Otros transistores... PMZB150UNE , PMZB200UNE , PMZB290UN , PMZB290UNE , PMZB290UNE2 , PMZB300XN , PMZB320UPE , PMZB350UPE , IRF540 , PMZB380XN , PMZB390UNE , PMZB420UN , PMZB550UNE , PMZB600UNE , PMZB670UPE , PMZB790SN , PMZB950UPE .

History: 2SK783 | IRF4104PBF | 2SK1905 | IXFH28N60P3 | H4946S | IRFU430APBF | IXFH16N120P

 

 
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