Справочник MOSFET. PMZB370UNE

 

PMZB370UNE MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: PMZB370UNE
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.36 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.05 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.9 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 0.77 nC
   trⓘ - Время нарастания: 9 ns
   Cossⓘ - Выходная емкость: 9 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.49 Ohm
   Тип корпуса: DFN1006B-3

 Аналог (замена) для PMZB370UNE

 

 

PMZB370UNE Datasheet (PDF)

 ..1. Size:968K  nxp
 pmzb370une.pdf

PMZB370UNE PMZB370UNE

PMZB370UNE30 V, single N-channel Trench MOSFETRev. 1 8 May 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Ultra thin package

 9.1. Size:220K  nxp
 pmzb320upe.pdf

PMZB370UNE PMZB370UNE

PMZB320UPE30 V, P-channel Trench MOSFET24 March 2015 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching

 9.2. Size:215K  nxp
 pmzb390une.pdf

PMZB370UNE PMZB370UNE

PMZB390UNE30 V, N-channel Trench MOSFET12 March 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Very fast switching Low threshold voltage Trench MOSFET technology

 9.3. Size:205K  nxp
 pmzb300xn.pdf

PMZB370UNE PMZB370UNE

PMZB300XN20 V, single N-channel Trench MOSFET1 August 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.1.2 Features and benefits Fast switching Trench MOSFET technology Low

 9.4. Size:190K  nxp
 pmzb350upe.pdf

PMZB370UNE PMZB370UNE

PMZB350UPE20 V, single P-channel Trench MOSFET1 August 2012 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.1.2 Features and benefits Low threshold voltage Very fast switching T

 9.5. Size:204K  nxp
 pmzb380xn.pdf

PMZB370UNE PMZB370UNE

PMZB380XN30 V, single N-channel Trench MOSFET1 August 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.1.2 Features and benefits Fast switching Trench MOSFET technology Low

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History: IXFN55N50

 

 
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