PMZB370UNE MOSFET. Datasheet pdf. Equivalent
Type Designator: PMZB370UNE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.05 V
|Id|ⓘ - Maximum Drain Current: 0.9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 0.77 nC
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 9 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.49 Ohm
Package: DFN1006B-3
PMZB370UNE Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMZB370UNE Datasheet (PDF)
pmzb370une.pdf
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pmzb320upe.pdf
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pmzb390une.pdf
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pmzb300xn.pdf
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pmzb350upe.pdf
PMZB350UPE20 V, single P-channel Trench MOSFET1 August 2012 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.1.2 Features and benefits Low threshold voltage Very fast switching T
pmzb380xn.pdf
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Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: BUK625R0-40C
History: BUK625R0-40C
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