All MOSFET. PMZB370UNE Datasheet

 

PMZB370UNE Datasheet and Replacement


   Type Designator: PMZB370UNE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 0.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 9 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.49 Ohm
   Package: DFN1006B-3
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PMZB370UNE Datasheet (PDF)

 ..1. Size:968K  nxp
 pmzb370une.pdf pdf_icon

PMZB370UNE

PMZB370UNE30 V, single N-channel Trench MOSFETRev. 1 8 May 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Ultra thin package

 9.1. Size:220K  nxp
 pmzb320upe.pdf pdf_icon

PMZB370UNE

PMZB320UPE30 V, P-channel Trench MOSFET24 March 2015 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching

 9.2. Size:215K  nxp
 pmzb390une.pdf pdf_icon

PMZB370UNE

PMZB390UNE30 V, N-channel Trench MOSFET12 March 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Very fast switching Low threshold voltage Trench MOSFET technology

 9.3. Size:205K  nxp
 pmzb300xn.pdf pdf_icon

PMZB370UNE

PMZB300XN20 V, single N-channel Trench MOSFET1 August 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.1.2 Features and benefits Fast switching Trench MOSFET technology Low

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History: HAT2275R | 2SK4096LS | UT8205A | HU70N08 | AOI7N65 | AP4430GM-HF | WML11N80M3

Keywords - PMZB370UNE MOSFET datasheet

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