PMZB380XN MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PMZB380XN

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.36 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 0.93 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9.5 nS

Cossⓘ - Capacitancia de salida: 8.6 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.46 Ohm

Encapsulados: DFN1006B-3

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PMZB380XN datasheet

 ..1. Size:204K  nxp
 pmzb380xn.pdf pdf_icon

PMZB380XN

PMZB380XN 30 V, single N-channel Trench MOSFET 1 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Fast switching Trench MOSFET technology Low

 9.1. Size:220K  nxp
 pmzb320upe.pdf pdf_icon

PMZB380XN

PMZB320UPE 30 V, P-channel Trench MOSFET 24 March 2015 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching

 9.2. Size:968K  nxp
 pmzb370une.pdf pdf_icon

PMZB380XN

PMZB370UNE 30 V, single N-channel Trench MOSFET Rev. 1 8 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Ultra thin package

 9.3. Size:215K  nxp
 pmzb390une.pdf pdf_icon

PMZB380XN

PMZB390UNE 30 V, N-channel Trench MOSFET 12 March 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Very fast switching Low threshold voltage Trench MOSFET technology

MOSTRAR MÁS

Otros transistores... PMZB200UNE, PMZB290UN, PMZB290UNE, PMZB290UNE2, PMZB300XN, PMZB320UPE, PMZB350UPE, PMZB370UNE, IRF540, PMZB390UNE, PMZB420UN, PMZB550UNE, PMZB600UNE, PMZB670UPE, PMZB790SN, PMZB950UPE, PNM23T100V6