PMZB380XN Todos los transistores

 

PMZB380XN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PMZB380XN
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.36 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 0.93 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 9.5 nS
   Cossⓘ - Capacitancia de salida: 8.6 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.46 Ohm
   Paquete / Cubierta: DFN1006B-3
     - Selección de transistores por parámetros

 

PMZB380XN Datasheet (PDF)

 ..1. Size:204K  nxp
 pmzb380xn.pdf pdf_icon

PMZB380XN

PMZB380XN30 V, single N-channel Trench MOSFET1 August 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.1.2 Features and benefits Fast switching Trench MOSFET technology Low

 9.1. Size:220K  nxp
 pmzb320upe.pdf pdf_icon

PMZB380XN

PMZB320UPE30 V, P-channel Trench MOSFET24 March 2015 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching

 9.2. Size:968K  nxp
 pmzb370une.pdf pdf_icon

PMZB380XN

PMZB370UNE30 V, single N-channel Trench MOSFETRev. 1 8 May 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Ultra thin package

 9.3. Size:215K  nxp
 pmzb390une.pdf pdf_icon

PMZB380XN

PMZB390UNE30 V, N-channel Trench MOSFET12 March 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Very fast switching Low threshold voltage Trench MOSFET technology

MOSTRAR MÁS

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IRFZ24L

 

 
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