PMZB380XN Specs and Replacement

Type Designator: PMZB380XN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 0.93 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.5 nS

Cossⓘ - Output Capacitance: 8.6 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.46 Ohm

Package: DFN1006B-3

PMZB380XN substitution

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PMZB380XN datasheet

 ..1. Size:204K  nxp
 pmzb380xn.pdf pdf_icon

PMZB380XN

PMZB380XN 30 V, single N-channel Trench MOSFET 1 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Fast switching Trench MOSFET technology Low ... See More ⇒

 9.1. Size:220K  nxp
 pmzb320upe.pdf pdf_icon

PMZB380XN

PMZB320UPE 30 V, P-channel Trench MOSFET 24 March 2015 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching ... See More ⇒

 9.2. Size:968K  nxp
 pmzb370une.pdf pdf_icon

PMZB380XN

PMZB370UNE 30 V, single N-channel Trench MOSFET Rev. 1 8 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Ultra thin package ... See More ⇒

 9.3. Size:215K  nxp
 pmzb390une.pdf pdf_icon

PMZB380XN

PMZB390UNE 30 V, N-channel Trench MOSFET 12 March 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Very fast switching Low threshold voltage Trench MOSFET technology ... See More ⇒

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Detailed specifications: PMZB200UNE, PMZB290UN, PMZB290UNE, PMZB290UNE2, PMZB300XN, PMZB320UPE, PMZB350UPE, PMZB370UNE, IRF540, PMZB390UNE, PMZB420UN, PMZB550UNE, PMZB600UNE, PMZB670UPE, PMZB790SN, PMZB950UPE, PNM23T100V6

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