PMZB380XN
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: PMZB380XN
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 0.36
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1.5
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 0.93
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 0.65
nC
trⓘ -
Время нарастания: 9.5
ns
Cossⓘ - Выходная емкость: 8.6
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.46
Ohm
Тип корпуса:
DFN1006B-3
Аналог (замена) для PMZB380XN
PMZB380XN
Datasheet (PDF)
..1. Size:204K nxp
pmzb380xn.pdf PMZB380XN30 V, single N-channel Trench MOSFET1 August 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.1.2 Features and benefits Fast switching Trench MOSFET technology Low
9.1. Size:220K nxp
pmzb320upe.pdf PMZB320UPE30 V, P-channel Trench MOSFET24 March 2015 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching
9.2. Size:968K nxp
pmzb370une.pdf PMZB370UNE30 V, single N-channel Trench MOSFETRev. 1 8 May 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Ultra thin package
9.3. Size:215K nxp
pmzb390une.pdf PMZB390UNE30 V, N-channel Trench MOSFET12 March 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Very fast switching Low threshold voltage Trench MOSFET technology
9.4. Size:205K nxp
pmzb300xn.pdf PMZB300XN20 V, single N-channel Trench MOSFET1 August 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.1.2 Features and benefits Fast switching Trench MOSFET technology Low
9.5. Size:190K nxp
pmzb350upe.pdf PMZB350UPE20 V, single P-channel Trench MOSFET1 August 2012 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.1.2 Features and benefits Low threshold voltage Very fast switching T
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