PSMN004-36B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PSMN004-36B

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 230 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 36 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 15 V

|Id|ⓘ - Corriente continua de drenaje: 75 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 220 nS

Cossⓘ - Capacitancia de salida: 1700 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm

Encapsulados: D2-PAK

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PSMN004-36B datasheet

 ..1. Size:294K  philips
 psmn004-36b.pdf pdf_icon

PSMN004-36B

PSMN004-36P/36B N-channel enhancement mode field-effect transistor Rev. 01 19 November 2001 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability PSMN004-36P in SOT78 (TO-220AB) PSMN004-36B in SOT404 (D2-PAK). 2. Features Very low on-state resistance Fast switching. 3. Applicat

 6.1. Size:105K  philips
 psmn004-25b p 4.pdf pdf_icon

PSMN004-36B

Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN004-25B, PSMN004-25P FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 75 A Low thermal resistance RDS(ON) 4 m (VGS = 10 V) g RDS(ON) 5 m (VGS = 5 V) s GENERAL DESCRIPTION SiliconMAX pr

 6.2. Size:96K  philips
 psmn004-55w.pdf pdf_icon

PSMN004-36B

Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN004-55W FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Very low on-state resistance Fast switching ID = 100 A Low thermal resistance Logic level compatible RDS(ON) 4.2 m (VGS = 10 V) g RDS(ON) 4.5 m (VGS = 5 V) s RDS(ON) 5

 6.3. Size:712K  nxp
 psmn004-60b.pdf pdf_icon

PSMN004-36B

PSMN004-60B N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 15 December 2009 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial ap

MOSTRAR MÁS

Otros transistores... PS8205B, PS90N80, PSMG100-05, PSMG150-01, PSMG50-05, PSMG60-08, PSMN003-30B, PSMN003-30P, IRFP064N, PSMN004-55W, PSMN005-25D, PSMN005-55B, PSMN005-55P, PSMN005-75P, PSMN008-75P, PSMN009-100W, PSMN010-25YLC