PSMN004-36B PDF and Equivalents Search

 

PSMN004-36B Specs and Replacement


   Type Designator: PSMN004-36B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 230 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 36 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 220 nS
   Cossⓘ - Output Capacitance: 1700 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: D2-PAK
 

 PSMN004-36B substitution

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PSMN004-36B datasheet

 ..1. Size:294K  philips
psmn004-36b.pdf pdf_icon

PSMN004-36B

PSMN004-36P/36B N-channel enhancement mode field-effect transistor Rev. 01 19 November 2001 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability PSMN004-36P in SOT78 (TO-220AB) PSMN004-36B in SOT404 (D2-PAK). 2. Features Very low on-state resistance Fast switching. 3. Applicat... See More ⇒

 6.1. Size:105K  philips
psmn004-25b p 4.pdf pdf_icon

PSMN004-36B

Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN004-25B, PSMN004-25P FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 75 A Low thermal resistance RDS(ON) 4 m (VGS = 10 V) g RDS(ON) 5 m (VGS = 5 V) s GENERAL DESCRIPTION SiliconMAX pr... See More ⇒

 6.2. Size:96K  philips
psmn004-55w.pdf pdf_icon

PSMN004-36B

Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN004-55W FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Very low on-state resistance Fast switching ID = 100 A Low thermal resistance Logic level compatible RDS(ON) 4.2 m (VGS = 10 V) g RDS(ON) 4.5 m (VGS = 5 V) s RDS(ON) 5 ... See More ⇒

 6.3. Size:712K  nxp
psmn004-60b.pdf pdf_icon

PSMN004-36B

PSMN004-60B N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 15 December 2009 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial ap... See More ⇒

Detailed specifications: PS8205B , PS90N80 , PSMG100-05 , PSMG150-01 , PSMG50-05 , PSMG60-08 , PSMN003-30B , PSMN003-30P , IRFP064N , PSMN004-55W , PSMN005-25D , PSMN005-55B , PSMN005-55P , PSMN005-75P , PSMN008-75P , PSMN009-100W , PSMN010-25YLC .

History: AM10P10-530I | IRFM064

Keywords - PSMN004-36B MOSFET specs

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