PSMN011-60MS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PSMN011-60MS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 91 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 61 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8.46 nS

Cossⓘ - Capacitancia de salida: 191 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0113 Ohm

Encapsulados: LFPAK33

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PSMN011-60MS datasheet

 ..1. Size:342K  nxp
 psmn011-60ms.pdf pdf_icon

PSMN011-60MS

PSMN011-60MS N-channel 60 V 11.3 m standard level MOSFET in LFPAK33 4 June 2013 Product data sheet 1. General description Standard level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and conductio

 3.1. Size:338K  nxp
 psmn011-60ml.pdf pdf_icon

PSMN011-60MS

PSMN011-60ML N-channel 60 V 11.3 m logic level MOSFET in LFPAK33 4 June 2013 Product data sheet 1. General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and conduction loss

 6.1. Size:219K  philips
 psmn011-80ys.pdf pdf_icon

PSMN011-60MS

PSMN011-80YS N-channel LFPAK 80 V 11 m standard level MOSFET Rev. 02 28 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMO

 6.2. Size:317K  nxp
 psmn011-100ysf.pdf pdf_icon

PSMN011-60MS

PSMN011-100YSF NextPower 100V, 10.9 m N-channel MOSFET in LFPAK56 package 18 March 2019 Product data sheet 1. General description NextPower 100V standard level gate drive MOSFET. Qualified to 175 C and recommended for industrial & consumer applications. 2. Features and benefits Low Qrr for higher efficiency and lower spiking Qualified to 175 C Low QG x RDSon FOM for

MOSTRAR MÁS

Otros transistores... PSMN005-55P, PSMN005-75P, PSMN008-75P, PSMN009-100W, PSMN010-25YLC, PSMN010-55D, PSMN011-30YLC, PSMN011-60ML, IRFZ44, PSMN012-25YLC, PSMN012-80BS, PSMN013-100XS, PSMN013-100YSE, PSMN013-30MLC, PSMN015-60BS, PSMN016-100BS, WPH4003