Справочник MOSFET. PSMN011-60MS

 

PSMN011-60MS Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: PSMN011-60MS
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 91 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 61 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 8.46 ns
   Cossⓘ - Выходная емкость: 191 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0113 Ohm
   Тип корпуса: LFPAK33
 

 Аналог (замена) для PSMN011-60MS

   - подбор ⓘ MOSFET транзистора по параметрам

 

PSMN011-60MS Datasheet (PDF)

 ..1. Size:342K  nxp
psmn011-60ms.pdfpdf_icon

PSMN011-60MS

PSMN011-60MSN-channel 60 V 11.3 m standard level MOSFET in LFPAK334 June 2013 Product data sheet1. General descriptionStandard level enhancement mode N-channel MOSFET in LFPAK33 package. Thisproduct is designed and qualified for use in a wide range of industrial, communicationsand domestic equipment.2. Features and benefits High efficiency due to low switching and conductio

 3.1. Size:338K  nxp
psmn011-60ml.pdfpdf_icon

PSMN011-60MS

PSMN011-60MLN-channel 60 V 11.3 m logic level MOSFET in LFPAK334 June 2013 Product data sheet1. General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK33 package. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High efficiency due to low switching and conduction loss

 6.1. Size:219K  philips
psmn011-80ys.pdfpdf_icon

PSMN011-60MS

PSMN011-80YSN-channel LFPAK 80 V 11 m standard level MOSFETRev. 02 28 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMO

 6.2. Size:317K  nxp
psmn011-100ysf.pdfpdf_icon

PSMN011-60MS

PSMN011-100YSFNextPower 100V, 10.9 m N-channel MOSFET in LFPAK56package18 March 2019 Product data sheet1. General descriptionNextPower 100V standard level gate drive MOSFET. Qualified to 175 C and recommended forindustrial & consumer applications.2. Features and benefits Low Qrr for higher efficiency and lower spiking Qualified to 175 C Low QG x RDSon FOM for

Другие MOSFET... PSMN005-55P , PSMN005-75P , PSMN008-75P , PSMN009-100W , PSMN010-25YLC , PSMN010-55D , PSMN011-30YLC , PSMN011-60ML , IRFZ44 , PSMN012-25YLC , PSMN012-80BS , PSMN013-100XS , PSMN013-100YSE , PSMN013-30MLC , PSMN015-60BS , PSMN016-100BS , WPH4003 .

History: IRLR3715ZPBF | HITK0302MP | NCEP2390 | ME04N25-G | RUH1H130S | 2SJ589LS

 

 
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