PSMN011-60MS - Даташиты. Аналоги. Основные параметры
Наименование производителя: PSMN011-60MS
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 91 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 61 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 8.46 ns
Cossⓘ - Выходная емкость: 191 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0113 Ohm
Тип корпуса: LFPAK33
Аналог (замена) для PSMN011-60MS
PSMN011-60MS Datasheet (PDF)
psmn011-60ms.pdf

PSMN011-60MSN-channel 60 V 11.3 m standard level MOSFET in LFPAK334 June 2013 Product data sheet1. General descriptionStandard level enhancement mode N-channel MOSFET in LFPAK33 package. Thisproduct is designed and qualified for use in a wide range of industrial, communicationsand domestic equipment.2. Features and benefits High efficiency due to low switching and conductio
psmn011-60ml.pdf

PSMN011-60MLN-channel 60 V 11.3 m logic level MOSFET in LFPAK334 June 2013 Product data sheet1. General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK33 package. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High efficiency due to low switching and conduction loss
psmn011-80ys.pdf

PSMN011-80YSN-channel LFPAK 80 V 11 m standard level MOSFETRev. 02 28 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMO
psmn011-100ysf.pdf

PSMN011-100YSFNextPower 100V, 10.9 m N-channel MOSFET in LFPAK56package18 March 2019 Product data sheet1. General descriptionNextPower 100V standard level gate drive MOSFET. Qualified to 175 C and recommended forindustrial & consumer applications.2. Features and benefits Low Qrr for higher efficiency and lower spiking Qualified to 175 C Low QG x RDSon FOM for
Другие MOSFET... PSMN005-55P , PSMN005-75P , PSMN008-75P , PSMN009-100W , PSMN010-25YLC , PSMN010-55D , PSMN011-30YLC , PSMN011-60ML , IRFZ44 , PSMN012-25YLC , PSMN012-80BS , PSMN013-100XS , PSMN013-100YSE , PSMN013-30MLC , PSMN015-60BS , PSMN016-100BS , WPH4003 .



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