All MOSFET. PSMN011-60MS Datasheet

 

PSMN011-60MS Datasheet and Replacement


   Type Designator: PSMN011-60MS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 91 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 61 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 8.46 nS
   Cossⓘ - Output Capacitance: 191 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0113 Ohm
   Package: LFPAK33
 

 PSMN011-60MS substitution

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PSMN011-60MS Datasheet (PDF)

 ..1. Size:342K  nxp
psmn011-60ms.pdf pdf_icon

PSMN011-60MS

PSMN011-60MSN-channel 60 V 11.3 m standard level MOSFET in LFPAK334 June 2013 Product data sheet1. General descriptionStandard level enhancement mode N-channel MOSFET in LFPAK33 package. Thisproduct is designed and qualified for use in a wide range of industrial, communicationsand domestic equipment.2. Features and benefits High efficiency due to low switching and conductio

 3.1. Size:338K  nxp
psmn011-60ml.pdf pdf_icon

PSMN011-60MS

PSMN011-60MLN-channel 60 V 11.3 m logic level MOSFET in LFPAK334 June 2013 Product data sheet1. General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK33 package. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High efficiency due to low switching and conduction loss

 6.1. Size:219K  philips
psmn011-80ys.pdf pdf_icon

PSMN011-60MS

PSMN011-80YSN-channel LFPAK 80 V 11 m standard level MOSFETRev. 02 28 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMO

 6.2. Size:317K  nxp
psmn011-100ysf.pdf pdf_icon

PSMN011-60MS

PSMN011-100YSFNextPower 100V, 10.9 m N-channel MOSFET in LFPAK56package18 March 2019 Product data sheet1. General descriptionNextPower 100V standard level gate drive MOSFET. Qualified to 175 C and recommended forindustrial & consumer applications.2. Features and benefits Low Qrr for higher efficiency and lower spiking Qualified to 175 C Low QG x RDSon FOM for

Datasheet: PSMN005-55P , PSMN005-75P , PSMN008-75P , PSMN009-100W , PSMN010-25YLC , PSMN010-55D , PSMN011-30YLC , PSMN011-60ML , IRFZ44 , PSMN012-25YLC , PSMN012-80BS , PSMN013-100XS , PSMN013-100YSE , PSMN013-30MLC , PSMN015-60BS , PSMN016-100BS , WPH4003 .

History: WMK15N65F2

Keywords - PSMN011-60MS MOSFET datasheet

 PSMN011-60MS cross reference
 PSMN011-60MS equivalent finder
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