All MOSFET. PSMN011-60MS Datasheet

 

PSMN011-60MS Datasheet and Replacement


   Type Designator: PSMN011-60MS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 91 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 61 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 8.46 nS
   Cossⓘ - Output Capacitance: 191 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0113 Ohm
   Package: LFPAK33
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PSMN011-60MS Datasheet (PDF)

 ..1. Size:342K  nxp
psmn011-60ms.pdf pdf_icon

PSMN011-60MS

PSMN011-60MSN-channel 60 V 11.3 m standard level MOSFET in LFPAK334 June 2013 Product data sheet1. General descriptionStandard level enhancement mode N-channel MOSFET in LFPAK33 package. Thisproduct is designed and qualified for use in a wide range of industrial, communicationsand domestic equipment.2. Features and benefits High efficiency due to low switching and conductio

 3.1. Size:338K  nxp
psmn011-60ml.pdf pdf_icon

PSMN011-60MS

PSMN011-60MLN-channel 60 V 11.3 m logic level MOSFET in LFPAK334 June 2013 Product data sheet1. General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK33 package. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High efficiency due to low switching and conduction loss

 6.1. Size:219K  philips
psmn011-80ys.pdf pdf_icon

PSMN011-60MS

PSMN011-80YSN-channel LFPAK 80 V 11 m standard level MOSFETRev. 02 28 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMO

 6.2. Size:317K  nxp
psmn011-100ysf.pdf pdf_icon

PSMN011-60MS

PSMN011-100YSFNextPower 100V, 10.9 m N-channel MOSFET in LFPAK56package18 March 2019 Product data sheet1. General descriptionNextPower 100V standard level gate drive MOSFET. Qualified to 175 C and recommended forindustrial & consumer applications.2. Features and benefits Low Qrr for higher efficiency and lower spiking Qualified to 175 C Low QG x RDSon FOM for

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IXTP8N45MA | OSG65R099FF | 4N65KL-T2Q-R | VBE1102N | SMF14N65 | TK3A60DA | PK5V8EN

Keywords - PSMN011-60MS MOSFET datasheet

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