WVM20N50 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WVM20N50
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 230 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.25 Ohm
Paquete / Cubierta: TO3
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WVM20N50 Datasheet (PDF)
wvm20n50.pdf

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM20N50Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power source co
wvm20n8.pdf

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM20N8(MTM20N10) Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power
Otros transistores... WVM12N10 , WVM13N50 , WVM15N20 , WVM15N40 , WVM15N45 , WVM15N50 , WVM15N60 , WVM18N20 , IRFP260 , WVM20N8 , WVM21N50 , WVM25N40 , WVM28N10 , WVM3.9N100 , WVM30N10 , WVM30N20 , WVM30N30 .
History: TPC8064-H | FTK4410D | FHP100N03B | ME200N04T-G | APTC60HM45SCTG
History: TPC8064-H | FTK4410D | FHP100N03B | ME200N04T-G | APTC60HM45SCTG



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