WVM20N50 Datasheet and Replacement
Type Designator: WVM20N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 230 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: TO3
WVM20N50 substitution
WVM20N50 Datasheet (PDF)
wvm20n50.pdf

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM20N50Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power source co
wvm20n8.pdf

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM20N8(MTM20N10) Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power
Datasheet: WVM12N10 , WVM13N50 , WVM15N20 , WVM15N40 , WVM15N45 , WVM15N50 , WVM15N60 , WVM18N20 , IRFP260 , WVM20N8 , WVM21N50 , WVM25N40 , WVM28N10 , WVM3.9N100 , WVM30N10 , WVM30N20 , WVM30N30 .
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