WVM3.9N100 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: WVM3.9N100
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1000 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4 Ohm
Paquete / Cubierta: TO3

Búsqueda de reemplazo de MOSFET WVM3.9N100

WVM3.9N100 Datasheet (PDF)

..1. Size:22K shaanxi
wvm3.9n100.pdf

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM3.9N100Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power source

9.1. Size:22K shaanxi
wvm30n20.pdf

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM30N20Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: GJB33A-97, QZJ840611 3. Use for high speed switch, circuit of powe

9.2. Size:23K shaanxi
wvm3n10.pdf

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM3N10Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power source con

9.3. Size:23K shaanxi
wvm3n30.pdf

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM3N30(New)Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: GJB33A-97, QZJ840611 3. Use for high speed switch, circuit of

9.4. Size:22K shaanxi
wvm30n30.pdf

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM30N30Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: GJB33A-97, QZJ840611 3. Use for high speed switch, circuit of powe

9.5. Size:23K shaanxi
wvm30n10.pdf

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM30N10Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: GJB33A-97, QZJ840611 3. Use for high speed switch, circuit of powe

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