WVM3.9N100 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WVM3.9N100
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 150 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 1000 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3.9 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 4 Ohm
Encapsulados: TO3
Búsqueda de reemplazo de WVM3.9N100 MOSFET
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WVM3.9N100 datasheet
wvm3.9n100.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China WVM3.9N100 Power MOSFET(N-channel) Transistor Features 1. It s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards QZJ840611 3. Use for high speed switch, circuit of power source
wvm30n20.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China WVM30N20 Power MOSFET(N-channel) Transistor Features 1. It s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards GJB33A-97, QZJ840611 3. Use for high speed switch, circuit of powe
wvm3n10.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China WVM3N10 Power MOSFET(N-channel) Transistor Features 1. It s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards QZJ840611 3. Use for high speed switch, circuit of power source con
wvm3n30.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China WVM3N30(New) Power MOSFET(N-channel) Transistor Features 1. It s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards GJB33A-97, QZJ840611 3. Use for high speed switch, circuit of
Otros transistores... WVM15N50, WVM15N60, WVM18N20, WVM20N50, WVM20N8, WVM21N50, WVM25N40, WVM28N10, IRLB4132, WVM30N10, WVM30N20, WVM30N30, WVM3N10, WVM3N30, WVM40N20, WVM4N20, WVM4N50
History: KRF7603
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