WVM3.9N100 Todos los transistores

 

WVM3.9N100 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WVM3.9N100
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1000 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4 Ohm
   Paquete / Cubierta: TO3
 

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WVM3.9N100 Datasheet (PDF)

 ..1. Size:22K  shaanxi
 wvm3.9n100.pdf pdf_icon

WVM3.9N100

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM3.9N100Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power source

 9.1. Size:22K  shaanxi
 wvm30n20.pdf pdf_icon

WVM3.9N100

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM30N20Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: GJB33A-97, QZJ840611 3. Use for high speed switch, circuit of powe

 9.2. Size:23K  shaanxi
 wvm3n10.pdf pdf_icon

WVM3.9N100

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM3N10Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power source con

 9.3. Size:23K  shaanxi
 wvm3n30.pdf pdf_icon

WVM3.9N100

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM3N30(New)Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: GJB33A-97, QZJ840611 3. Use for high speed switch, circuit of

MOSTRAR MÁS

Otros transistores... WVM15N50 , WVM15N60 , WVM18N20 , WVM20N50 , WVM20N8 , WVM21N50 , WVM25N40 , WVM28N10 , 5N60 , WVM30N10 , WVM30N20 , WVM30N30 , WVM3N10 , WVM3N30 , WVM40N20 , WVM4N20 , WVM4N50 .

History: IRF7342D2PBF | IRF3704Z | IRFR3704 | SQM120N04-04 | TPA65R090M | RU7588R3 | AUIRF9540N

 

 
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