Справочник MOSFET. WVM3.9N100

 

WVM3.9N100 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: WVM3.9N100
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 150 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 1000 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3.9 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 4 Ohm
   Тип корпуса: TO3
     - подбор MOSFET транзистора по параметрам

 

WVM3.9N100 Datasheet (PDF)

 ..1. Size:22K  shaanxi
 wvm3.9n100.pdf pdf_icon

WVM3.9N100

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM3.9N100Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power source

 9.1. Size:22K  shaanxi
 wvm30n20.pdf pdf_icon

WVM3.9N100

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM30N20Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: GJB33A-97, QZJ840611 3. Use for high speed switch, circuit of powe

 9.2. Size:23K  shaanxi
 wvm3n10.pdf pdf_icon

WVM3.9N100

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM3N10Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power source con

 9.3. Size:23K  shaanxi
 wvm3n30.pdf pdf_icon

WVM3.9N100

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM3N30(New)Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: GJB33A-97, QZJ840611 3. Use for high speed switch, circuit of

ПОКАЗАТЬ ЕЩЁ

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History: AP60SL115AI | NCE70T540F | SM6A08NSFP | IRFL1006PBF | AP85T08GS-HF | 6760 | HM1404

 

 
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