All MOSFET. WVM3.9N100 Datasheet

 

WVM3.9N100 Datasheet and Replacement


   Type Designator: WVM3.9N100
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
   Package: TO3
 

 WVM3.9N100 substitution

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WVM3.9N100 Datasheet (PDF)

 ..1. Size:22K  shaanxi
 wvm3.9n100.pdf pdf_icon

WVM3.9N100

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM3.9N100Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power source

 9.1. Size:22K  shaanxi
 wvm30n20.pdf pdf_icon

WVM3.9N100

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM30N20Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: GJB33A-97, QZJ840611 3. Use for high speed switch, circuit of powe

 9.2. Size:23K  shaanxi
 wvm3n10.pdf pdf_icon

WVM3.9N100

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM3N10Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power source con

 9.3. Size:23K  shaanxi
 wvm3n30.pdf pdf_icon

WVM3.9N100

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM3N30(New)Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: GJB33A-97, QZJ840611 3. Use for high speed switch, circuit of

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Datasheet: WVM15N50 , WVM15N60 , WVM18N20 , WVM20N50 , WVM20N8 , WVM21N50 , WVM25N40 , WVM28N10 , IRLB4132 , WVM30N10 , WVM30N20 , WVM30N30 , WVM3N10 , WVM3N30 , WVM40N20 , WVM4N20 , WVM4N50 .

History: FDMS3600AS | UTT30P06G-TN3-R | IXFA12N50P | UTT4850L-S08-R | 2SK2606 | MTM45N05E

Keywords - WVM3.9N100 MOSFET datasheet

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