All MOSFET. WVM3.9N100 Datasheet

 

WVM3.9N100 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WVM3.9N100
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 3.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
   Package: TO3

 WVM3.9N100 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WVM3.9N100 Datasheet (PDF)

 ..1. Size:22K  shaanxi
 wvm3.9n100.pdf

WVM3.9N100

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM3.9N100Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power source

 9.1. Size:22K  shaanxi
 wvm30n20.pdf

WVM3.9N100

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM30N20Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: GJB33A-97, QZJ840611 3. Use for high speed switch, circuit of powe

 9.2. Size:23K  shaanxi
 wvm3n10.pdf

WVM3.9N100

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM3N10Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power source con

 9.3. Size:23K  shaanxi
 wvm3n30.pdf

WVM3.9N100

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM3N30(New)Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: GJB33A-97, QZJ840611 3. Use for high speed switch, circuit of

 9.4. Size:22K  shaanxi
 wvm30n30.pdf

WVM3.9N100

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM30N30Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: GJB33A-97, QZJ840611 3. Use for high speed switch, circuit of powe

 9.5. Size:23K  shaanxi
 wvm30n10.pdf

WVM3.9N100

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM30N10Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: GJB33A-97, QZJ840611 3. Use for high speed switch, circuit of powe

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: RFM12N08L

 

 
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