PSMN0R7-25YLD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PSMN0R7-25YLD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 291 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Cossⓘ - Capacitancia de salida: 3242 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0007 Ohm
   Paquete / Cubierta: LFPAK56

Búsqueda de reemplazo de MOSFET PSMN0R7-25YLD

PSMN0R7-25YLD Datasheet (PDF)

..1. Size:230K nxp
psmn0r7-25yld.pdf

PSMN0R7-25YLDN-channel 25 V, 0.7 m logic level MOSFET in LFPAK56using NextPowerS3 Technology15 April 2015 Objective data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising NXP's unique "SchottkyPlus" technology delivershigh efficiency, low spiking performance usually associated with MOSFETS with

8.1. Size:300K philips
psmn0r9-25ylc.pdf

PSMN0R9-25YLCN-channel 25 V 0.99 m logic level MOSFET in LFPAK using NextPower technologyRev. 2 4 July 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits

8.2. Size:911K nxp
psmn0r9-25ylc.pdf

8.3. Size:263K nxp
psmn0r9-30uld.pdf

PSMN0R9-30ULDN-channel 30 V, 0.87 m, 300 A logic level MOSFETin SOT1023A enhanced package for UL2595, usingNextPowerS3 Schottky-Plus Technology23 May 2018 Product data sheet1. General descriptionSOT1023A with improved creepage and clearance to meet UL2595 requirements. 300 Amp logiclevel gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3portfolio util

8.4. Size:290K nxp
psmn0r9-30yld.pdf

PSMN0R9-30YLDN-channel 30 V, 0.87 m logic level MOSFET in LFPAK56using NextPowerS3 Technology11 November 2014 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising NXPs unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSFE

8.5. Size:726K nxp
psmn0r9-25yld.pdf

PSMN0R9-25YLDN-channel 25 V, 0.85 m, 300 A logic level MOSFET inLFPAK56 using NextPowerS3 Technology27 April 2016 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising Nexperias unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated w

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