All MOSFET. PSMN0R7-25YLD Datasheet

 

PSMN0R7-25YLD Datasheet and Replacement


   Type Designator: PSMN0R7-25YLD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 291 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 3242 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0007 Ohm
   Package: LFPAK56
      - MOSFET Cross-Reference Search

 

PSMN0R7-25YLD Datasheet (PDF)

 ..1. Size:230K  nxp
psmn0r7-25yld.pdf pdf_icon

PSMN0R7-25YLD

PSMN0R7-25YLDN-channel 25 V, 0.7 m logic level MOSFET in LFPAK56using NextPowerS3 Technology15 April 2015 Objective data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising NXP's unique "SchottkyPlus" technology delivershigh efficiency, low spiking performance usually associated with MOSFETS with

 8.1. Size:300K  philips
psmn0r9-25ylc.pdf pdf_icon

PSMN0R7-25YLD

PSMN0R9-25YLCN-channel 25 V 0.99 m logic level MOSFET in LFPAK using NextPower technologyRev. 2 4 July 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits

 8.2. Size:911K  nxp
psmn0r9-25ylc.pdf pdf_icon

PSMN0R7-25YLD

PSMN0R9-25YLCN-channel 25 V 0.99 m logic level MOSFET in LFPAK using NextPower technologyRev. 2 4 July 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits

 8.3. Size:263K  nxp
psmn0r9-30uld.pdf pdf_icon

PSMN0R7-25YLD

PSMN0R9-30ULDN-channel 30 V, 0.87 m, 300 A logic level MOSFETin SOT1023A enhanced package for UL2595, usingNextPowerS3 Schottky-Plus Technology23 May 2018 Product data sheet1. General descriptionSOT1023A with improved creepage and clearance to meet UL2595 requirements. 300 Amp logiclevel gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3portfolio util

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: PMN230ENEA | SSM3J327F | SFB053N100C3 | FQU13N10 | SWMI4N65D | NTMFS4837NHT1G | BMS3003

Keywords - PSMN0R7-25YLD MOSFET datasheet

 PSMN0R7-25YLD cross reference
 PSMN0R7-25YLD equivalent finder
 PSMN0R7-25YLD lookup
 PSMN0R7-25YLD substitution
 PSMN0R7-25YLD replacement

 

 
Back to Top

 


 
.