PSMN0R7-25YLD MOSFET. Datasheet pdf. Equivalent
Type Designator: PSMN0R7-25YLD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 291 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 100 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 106.4 nC
Cossⓘ - Output Capacitance: 3242 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0007 Ohm
Package: LFPAK56
PSMN0R7-25YLD Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PSMN0R7-25YLD Datasheet (PDF)
psmn0r7-25yld.pdf
PSMN0R7-25YLDN-channel 25 V, 0.7 m logic level MOSFET in LFPAK56using NextPowerS3 Technology15 April 2015 Objective data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising NXP's unique "SchottkyPlus" technology delivershigh efficiency, low spiking performance usually associated with MOSFETS with
psmn0r9-25ylc.pdf
PSMN0R9-25YLCN-channel 25 V 0.99 m logic level MOSFET in LFPAK using NextPower technologyRev. 2 4 July 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits
psmn0r9-25ylc.pdf
PSMN0R9-25YLCN-channel 25 V 0.99 m logic level MOSFET in LFPAK using NextPower technologyRev. 2 4 July 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits
psmn0r9-30uld.pdf
PSMN0R9-30ULDN-channel 30 V, 0.87 m, 300 A logic level MOSFETin SOT1023A enhanced package for UL2595, usingNextPowerS3 Schottky-Plus Technology23 May 2018 Product data sheet1. General descriptionSOT1023A with improved creepage and clearance to meet UL2595 requirements. 300 Amp logiclevel gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3portfolio util
psmn0r9-30yld.pdf
PSMN0R9-30YLDN-channel 30 V, 0.87 m logic level MOSFET in LFPAK56using NextPowerS3 Technology11 November 2014 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising NXPs unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSFE
psmn0r9-25yld.pdf
PSMN0R9-25YLDN-channel 25 V, 0.85 m, 300 A logic level MOSFET inLFPAK56 using NextPowerS3 Technology27 April 2016 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising Nexperias unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated w
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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