All MOSFET. PSMN0R7-25YLD Datasheet

 

PSMN0R7-25YLD Datasheet and Replacement


   Type Designator: PSMN0R7-25YLD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 291 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 3242 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0007 Ohm
   Package: LFPAK56
 

 PSMN0R7-25YLD substitution

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PSMN0R7-25YLD Datasheet (PDF)

 ..1. Size:230K  nxp
psmn0r7-25yld.pdf pdf_icon

PSMN0R7-25YLD

PSMN0R7-25YLDN-channel 25 V, 0.7 m logic level MOSFET in LFPAK56using NextPowerS3 Technology15 April 2015 Objective data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising NXP's unique "SchottkyPlus" technology delivershigh efficiency, low spiking performance usually associated with MOSFETS with

 8.1. Size:300K  philips
psmn0r9-25ylc.pdf pdf_icon

PSMN0R7-25YLD

PSMN0R9-25YLCN-channel 25 V 0.99 m logic level MOSFET in LFPAK using NextPower technologyRev. 2 4 July 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits

 8.2. Size:911K  nxp
psmn0r9-25ylc.pdf pdf_icon

PSMN0R7-25YLD

PSMN0R9-25YLCN-channel 25 V 0.99 m logic level MOSFET in LFPAK using NextPower technologyRev. 2 4 July 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits

 8.3. Size:263K  nxp
psmn0r9-30uld.pdf pdf_icon

PSMN0R7-25YLD

PSMN0R9-30ULDN-channel 30 V, 0.87 m, 300 A logic level MOSFETin SOT1023A enhanced package for UL2595, usingNextPowerS3 Schottky-Plus Technology23 May 2018 Product data sheet1. General descriptionSOT1023A with improved creepage and clearance to meet UL2595 requirements. 300 Amp logiclevel gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3portfolio util

Datasheet: PSMN027-100XS , PSMN034-100BS , PSMN038-100YL , PSMN040-100MSE , PSMN040-200W , PSMN041-80YL , PSMN050-80BS , PSMN075-100MSE , 2N60 , PSMN0R9-30YLD , PSMN1R0-30YLD , PSMN1R0-40YLD , PSMN1R1-40BS , PSMN1R2-30YLD , PSMN1R4-30YLD , PSMN1R4-40YLD , PSMN1R5-30BLE .

History: IXFT30N60X | APQ84SN06A

Keywords - PSMN0R7-25YLD MOSFET datasheet

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