PSMN0R7-25YLD - описание и поиск аналогов

 

PSMN0R7-25YLD. Аналоги и основные параметры

Наименование производителя: PSMN0R7-25YLD

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 291 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 25 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

Cossⓘ - Выходная емкость: 3242 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0007 Ohm

Тип корпуса: LFPAK56

Аналог (замена) для PSMN0R7-25YLD

- подборⓘ MOSFET транзистора по параметрам

 

PSMN0R7-25YLD даташит

 ..1. Size:230K  nxp
psmn0r7-25yld.pdfpdf_icon

PSMN0R7-25YLD

PSMN0R7-25YLD N-channel 25 V, 0.7 m logic level MOSFET in LFPAK56 using NextPowerS3 Technology 15 April 2015 Objective data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP's unique "SchottkyPlus" technology delivers high efficiency, low spiking performance usually associated with MOSFETS with

 8.1. Size:300K  philips
psmn0r9-25ylc.pdfpdf_icon

PSMN0R7-25YLD

PSMN0R9-25YLC N-channel 25 V 0.99 m logic level MOSFET in LFPAK using NextPower technology Rev. 2 4 July 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits

 8.2. Size:911K  nxp
psmn0r9-25ylc.pdfpdf_icon

PSMN0R7-25YLD

PSMN0R9-25YLC N-channel 25 V 0.99 m logic level MOSFET in LFPAK using NextPower technology Rev. 2 4 July 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits

 8.3. Size:263K  nxp
psmn0r9-30uld.pdfpdf_icon

PSMN0R7-25YLD

PSMN0R9-30ULD N-channel 30 V, 0.87 m , 300 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPowerS3 Schottky-Plus Technology 23 May 2018 Product data sheet 1. General description SOT1023A with improved creepage and clearance to meet UL2595 requirements. 300 Amp logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio util

Другие MOSFET... PSMN027-100XS , PSMN034-100BS , PSMN038-100YL , PSMN040-100MSE , PSMN040-200W , PSMN041-80YL , PSMN050-80BS , PSMN075-100MSE , 20N50 , PSMN0R9-30YLD , PSMN1R0-30YLD , PSMN1R0-40YLD , PSMN1R1-40BS , PSMN1R2-30YLD , PSMN1R4-30YLD , PSMN1R4-40YLD , PSMN1R5-30BLE .

 

 

 

 

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