PSMN1R0-40YLD MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN1R0-40YLD
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 198 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 62 nS
Cossⓘ - Capacitancia de salida: 1878 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0011 Ohm
Encapsulados: LFPAK56
Búsqueda de reemplazo de PSMN1R0-40YLD MOSFET
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PSMN1R0-40YLD datasheet
psmn1r0-40yld.pdf
PSMN1R0-40YLD N-channel 40 V 1.1 m logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 25 August 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in 150 C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching appli
psmn1r0-40ysh.pdf
PSMN1R0-40YSH N-channel 40 V, 1 m , 290 A standard level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology 25 April 2019 Product data sheet 1. General description 290 Amp, standard level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56E package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance
psmn1r0-40ssh.pdf
PSMN1R0-40SSH N-channel 40 V, 1 m , 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology 1 May 2019 Product data sheet 1. General description 325 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFET in LFPAK88 package. NextPowerS3 family using Nexperia s unique SchottkyPlus technology delivers high efficiency and low
psmn1r0-40uld.pdf
PSMN1R0-40ULD N-channel 40 V, 1.1 m , 280 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPower- S3 Schottky-Plus technology 23 May 2018 Product data sheet 1. General description SOT1023A with improved creepage and clearance to meet UL2595 requirements 280 Amp, logic level gate drive N-channel enhancement mode MOSFET in 150 C LFPAK56 package using advanced Tre
Otros transistores... PSMN040-100MSE , PSMN040-200W , PSMN041-80YL , PSMN050-80BS , PSMN075-100MSE , PSMN0R7-25YLD , PSMN0R9-30YLD , PSMN1R0-30YLD , STF13NM60N , PSMN1R1-40BS , PSMN1R2-30YLD , PSMN1R4-30YLD , PSMN1R4-40YLD , PSMN1R5-30BLE , PSMN1R6-30BL , PSMN1R6-40YLC , PSMN1R8-30BL .
History: AO7413
History: AO7413
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