PSMN1R0-40YLD Datasheet and Replacement
Type Designator: PSMN1R0-40YLD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 198 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 62 nS
Cossⓘ - Output Capacitance: 1878 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0011 Ohm
Package: LFPAK56
PSMN1R0-40YLD substitution
PSMN1R0-40YLD Datasheet (PDF)
psmn1r0-40yld.pdf

PSMN1R0-40YLDN-channel 40 V 1.1 m logic level MOSFET in LFPAK56 usingNextPower-S3 Schottky-Plus technology25 August 2014 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in 150 C LFPAK56package using advanced TrenchMOS Superjunction technology. This product has beendesigned and qualified for high performance power switching appli
psmn1r0-40ysh.pdf

PSMN1R0-40YSHN-channel 40 V, 1 m, 290 A standard level MOSFET inLFPAK56E using NextPower-S3 Schottky-Plus technology25 April 2019 Product data sheet1. General description290 Amp, standard level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56Epackage using advanced TrenchMOS Superjunction technology. This product has been designedand qualified for high performance
psmn1r0-40ssh.pdf

PSMN1R0-40SSHN-channel 40 V, 1 m, 325 Amps continuous, standard levelMOSFET in LFPAK88 using NextPowerS3 Technology1 May 2019 Product data sheet1. General description325 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFETin LFPAK88 package. NextPowerS3 family using Nexperias unique SchottkyPlus technologydelivers high efficiency and low
psmn1r0-40uld.pdf

PSMN1R0-40ULDN-channel 40 V, 1.1 m, 280 A logic level MOSFET inSOT1023A enhanced package for UL2595, using NextPower-S3 Schottky-Plus technology23 May 2018 Product data sheet1. General descriptionSOT1023A with improved creepage and clearance to meet UL2595 requirements 280 Amp, logiclevel gate drive N-channel enhancement mode MOSFET in 150 C LFPAK56 package usingadvanced Tre
Datasheet: PSMN040-100MSE , PSMN040-200W , PSMN041-80YL , PSMN050-80BS , PSMN075-100MSE , PSMN0R7-25YLD , PSMN0R9-30YLD , PSMN1R0-30YLD , IRF2807 , PSMN1R1-40BS , PSMN1R2-30YLD , PSMN1R4-30YLD , PSMN1R4-40YLD , PSMN1R5-30BLE , PSMN1R6-30BL , PSMN1R6-40YLC , PSMN1R8-30BL .
History: STB18NM60ND | APT5018BFLL
Keywords - PSMN1R0-40YLD MOSFET datasheet
PSMN1R0-40YLD cross reference
PSMN1R0-40YLD equivalent finder
PSMN1R0-40YLD lookup
PSMN1R0-40YLD substitution
PSMN1R0-40YLD replacement
History: STB18NM60ND | APT5018BFLL



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