PSMN1R0-40YLD - аналоги и даташиты транзистора

 

PSMN1R0-40YLD - Даташиты. Аналоги. Основные параметры


   Наименование производителя: PSMN1R0-40YLD
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 198 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 62 ns
   Cossⓘ - Выходная емкость: 1878 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0011 Ohm
   Тип корпуса: LFPAK56
 
   - подбор ⓘ MOSFET транзистора по параметрам

 

PSMN1R0-40YLD Datasheet (PDF)

 ..1. Size:288K  nxp
 psmn1r0-40yld.pdf pdf_icon

PSMN1R0-40YLD

PSMN1R0-40YLDN-channel 40 V 1.1 m logic level MOSFET in LFPAK56 usingNextPower-S3 Schottky-Plus technology25 August 2014 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in 150 C LFPAK56package using advanced TrenchMOS Superjunction technology. This product has beendesigned and qualified for high performance power switching appli

 3.1. Size:295K  nxp
 psmn1r0-40ysh.pdf pdf_icon

PSMN1R0-40YLD

PSMN1R0-40YSHN-channel 40 V, 1 m, 290 A standard level MOSFET inLFPAK56E using NextPower-S3 Schottky-Plus technology25 April 2019 Product data sheet1. General description290 Amp, standard level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56Epackage using advanced TrenchMOS Superjunction technology. This product has been designedand qualified for high performance

 4.1. Size:322K  nxp
 psmn1r0-40ssh.pdf pdf_icon

PSMN1R0-40YLD

PSMN1R0-40SSHN-channel 40 V, 1 m, 325 Amps continuous, standard levelMOSFET in LFPAK88 using NextPowerS3 Technology1 May 2019 Product data sheet1. General description325 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFETin LFPAK88 package. NextPowerS3 family using Nexperias unique SchottkyPlus technologydelivers high efficiency and low

 4.2. Size:264K  nxp
 psmn1r0-40uld.pdf pdf_icon

PSMN1R0-40YLD

PSMN1R0-40ULDN-channel 40 V, 1.1 m, 280 A logic level MOSFET inSOT1023A enhanced package for UL2595, using NextPower-S3 Schottky-Plus technology23 May 2018 Product data sheet1. General descriptionSOT1023A with improved creepage and clearance to meet UL2595 requirements 280 Amp, logiclevel gate drive N-channel enhancement mode MOSFET in 150 C LFPAK56 package usingadvanced Tre

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... PSMN040-100MSE , PSMN040-200W , PSMN041-80YL , PSMN050-80BS , PSMN075-100MSE , PSMN0R7-25YLD , PSMN0R9-30YLD , PSMN1R0-30YLD , IRF2807 , PSMN1R1-40BS , PSMN1R2-30YLD , PSMN1R4-30YLD , PSMN1R4-40YLD , PSMN1R5-30BLE , PSMN1R6-30BL , PSMN1R6-40YLC , PSMN1R8-30BL .

History: IRFHM830TRPBF

 

 
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