PSMN2R2-40BS Todos los transistores

 ..1. Size:214K  nxp
 psmn2r2-40bs.pdf

PSMN2R2-40BS N-channel 40 V 2.2 m standard level MOSFET in D2PAK Rev. 1 20 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in SOT404 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficie

 ..2. Size:254K  inchange semiconductor
 psmn2r2-40bs.pdf

isc N-Channel MOSFET Transistor PSMN2R2-40BS FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 2.2m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

 4.1. Size:205K  philips
 psmn2r2-40ps.pdf

PSMN2R2-40PS N-channel 40 V 2.1 m standard level MOSFET Rev. 02 28 September 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due

 4.2. Size:304K  nxp
 psmn2r2-40ysd.pdf

PSMN2R2-40YSD N-channel 40 V, 2.2 m , 180 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 25 September 2019 Product data sheet 1. General description 180 A, standard level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performan

 4.3. Size:744K  nxp
 psmn2r2-40ps.pdf

PSMN2R2-40PS N-channel 40 V 2.1 m standard level MOSFET 22 February 2013 Product data sheet 1. General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and conduction lo

 4.4. Size:260K  inchange semiconductor
 psmn2r2-40ps.pdf

isc N-Channel MOSFET Transistor PSMN2R2-40PS FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 2.1m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general