PSMN2R2-40BS Specs and Replacement
Type Designator: PSMN2R2-40BS
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 306 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V
Qg ⓘ - Total Gate Charge: 110 nC
tr ⓘ - Rise Time: 40.4 nS
Cossⓘ - Output Capacitance: 1671 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm
Package: D2PAK
PSMN2R2-40BS substitution
- MOSFET ⓘ Cross-Reference Search
PSMN2R2-40BS datasheet
psmn2r2-40bs.pdf
PSMN2R2-40BS N-channel 40 V 2.2 m standard level MOSFET in D2PAK Rev. 1 20 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in SOT404 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficie... See More ⇒
psmn2r2-40bs.pdf
isc N-Channel MOSFET Transistor PSMN2R2-40BS FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 2.2m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general ... See More ⇒
psmn2r2-40ps.pdf
PSMN2R2-40PS N-channel 40 V 2.1 m standard level MOSFET Rev. 02 28 September 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due ... See More ⇒
psmn2r2-40ysd.pdf
PSMN2R2-40YSD N-channel 40 V, 2.2 m , 180 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 25 September 2019 Product data sheet 1. General description 180 A, standard level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performan... See More ⇒
Detailed specifications: PSMN1R6-40YLC, PSMN1R8-30BL, PSMN1R8-40YLC, PSMN1R9-40PL, PSMN2R0-30BL, PSMN2R0-30YLD, PSMN2R0-30YLE, PSMN2R1-40PL, IRF9640, PSMN2R4-30MLD, PSMN2R4-30YLD, PSMN2R5-60PL, PSMN2R6-60PS, PSMN2R7-30BL, PSMN2R8-25MLC, PSMN2R8-40BS, PSMN2R8-80BS
Keywords - PSMN2R2-40BS MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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