PSMN2R2-40BS. Аналоги и основные параметры
Наименование производителя: PSMN2R2-40BS
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 306 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 40.4 ns
Cossⓘ - Выходная емкость: 1671 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0022 Ohm
Тип корпуса: D2PAK
Аналог (замена) для PSMN2R2-40BS
- подборⓘ MOSFET транзистора по параметрам
PSMN2R2-40BS даташит
psmn2r2-40bs.pdf
PSMN2R2-40BS N-channel 40 V 2.2 m standard level MOSFET in D2PAK Rev. 1 20 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in SOT404 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficie
psmn2r2-40bs.pdf
isc N-Channel MOSFET Transistor PSMN2R2-40BS FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 2.2m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general
psmn2r2-40ps.pdf
PSMN2R2-40PS N-channel 40 V 2.1 m standard level MOSFET Rev. 02 28 September 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due
psmn2r2-40ysd.pdf
PSMN2R2-40YSD N-channel 40 V, 2.2 m , 180 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 25 September 2019 Product data sheet 1. General description 180 A, standard level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performan
Другие MOSFET... PSMN1R6-40YLC , PSMN1R8-30BL , PSMN1R8-40YLC , PSMN1R9-40PL , PSMN2R0-30BL , PSMN2R0-30YLD , PSMN2R0-30YLE , PSMN2R1-40PL , IRF9640 , PSMN2R4-30MLD , PSMN2R4-30YLD , PSMN2R5-60PL , PSMN2R6-60PS , PSMN2R7-30BL , PSMN2R8-25MLC , PSMN2R8-40BS , PSMN2R8-80BS .
History: LNG05R155 | TSM6988DCX6 | LSG70R640GT | IXFH26N55Q | SUM90N04-3M3P | BLF6G27LS-100 | BUK9K52-60E
History: LNG05R155 | TSM6988DCX6 | LSG70R640GT | IXFH26N55Q | SUM90N04-3M3P | BLF6G27LS-100 | BUK9K52-60E
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