Справочник MOSFET. PSMN2R2-40BS

 

PSMN2R2-40BS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: PSMN2R2-40BS
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 306 W
   Предельно допустимое напряжение сток-исток |Uds|: 40 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 100 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 110 nC
   Время нарастания (tr): 40.4 ns
   Выходная емкость (Cd): 1671 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0022 Ohm
   Тип корпуса: D2PAK

 Аналог (замена) для PSMN2R2-40BS

 

 

PSMN2R2-40BS Datasheet (PDF)

 ..1. Size:214K  nxp
 psmn2r2-40bs.pdf

PSMN2R2-40BS PSMN2R2-40BS

PSMN2R2-40BSN-channel 40 V 2.2 m standard level MOSFET in D2PAKRev. 1 20 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in SOT404 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficie

 ..2. Size:254K  inchange semiconductor
 psmn2r2-40bs.pdf

PSMN2R2-40BS PSMN2R2-40BS

isc N-Channel MOSFET Transistor PSMN2R2-40BSFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 2.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

 4.1. Size:205K  philips
 psmn2r2-40ps.pdf

PSMN2R2-40BS PSMN2R2-40BS

PSMN2R2-40PSN-channel 40 V 2.1 m standard level MOSFETRev. 02 28 September 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due

 4.2. Size:304K  nxp
 psmn2r2-40ysd.pdf

PSMN2R2-40BS PSMN2R2-40BS

PSMN2R2-40YSDN-channel 40 V, 2.2 m, 180 A standard level MOSFET inLFPAK56 using NextPower-S3 Schottky-Plus technology25 September 2019 Product data sheet1. General description180 A, standard level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56package using advanced TrenchMOS Superjunction technology. This product has been designedand qualified for high performan

 4.3. Size:744K  nxp
 psmn2r2-40ps.pdf

PSMN2R2-40BS PSMN2R2-40BS

PSMN2R2-40PSN-channel 40 V 2.1 m standard level MOSFET22 February 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High efficiency due to low switching and conduction lo

 4.4. Size:260K  inchange semiconductor
 psmn2r2-40ps.pdf

PSMN2R2-40BS PSMN2R2-40BS

isc N-Channel MOSFET Transistor PSMN2R2-40PSFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 2.1m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

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