PSMN2R6-60PS Todos los transistores

 

PSMN2R6-60PS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PSMN2R6-60PS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 326 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 150 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 50 nS
   Cossⓘ - Capacitancia de salida: 968 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0026 Ohm
   Paquete / Cubierta: TO-220AB
 

 Búsqueda de reemplazo de PSMN2R6-60PS MOSFET

   - Selección ⓘ de transistores por parámetros

 

PSMN2R6-60PS Datasheet (PDF)

 ..1. Size:253K  nxp
psmn2r6-60ps.pdf pdf_icon

PSMN2R6-60PS

PSMN2R6-60PSN-channel 60 V, 2.6 m standard level MOSFET in SOT785 February 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in SOT78 using TrenchMOS technology. Productdesign and manufacture has been optimized for use in battery operated power tools.2. Features and benefits High efficiency due to low switching & conduction losses Robust const

 ..2. Size:261K  inchange semiconductor
psmn2r6-60ps.pdf pdf_icon

PSMN2R6-60PS

isc N-Channel MOSFET Transistor PSMN2R6-60PSFEATURESDrain Current I = 150A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 2.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

 6.1. Size:221K  philips
psmn2r6-40ys.pdf pdf_icon

PSMN2R6-60PS

PSMN2R6-40YSN-channel LFPAK 40 V 2.8 m standard level MOSFETRev. 01 23 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS

 6.2. Size:341K  philips
psmn2r6-30ylc.pdf pdf_icon

PSMN2R6-60PS

PSMN2R6-30YLCN-channel 30 V 2.8m logic level MOSFET in LFPAK using NextPower technologyRev. 01 2 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits

Otros transistores... PSMN2R0-30BL , PSMN2R0-30YLD , PSMN2R0-30YLE , PSMN2R1-40PL , PSMN2R2-40BS , PSMN2R4-30MLD , PSMN2R4-30YLD , PSMN2R5-60PL , 2SK3918 , PSMN2R7-30BL , PSMN2R8-25MLC , PSMN2R8-40BS , PSMN2R8-80BS , PSMN2R9-30MLC , PSMN3R0-30MLC , PSMN3R0-30YLD , PSMN3R0-60BS .

History: IRFS7434 | STFW45N65M5 | IRLML6344GT | STB170NF04 | CS7N65A4R | IPP320N20N3 | STT3470N

 

 
Back to Top

 


 
.