PSMN2R6-60PS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: PSMN2R6-60PS
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 326 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 150 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 140 nC
Время нарастания (tr): 50 ns
Выходная емкость (Cd): 968 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0026 Ohm
Тип корпуса: TO-220AB
Аналог (замена) для PSMN2R6-60PS
PSMN2R6-60PS Datasheet (PDF)
psmn2r6-60ps.pdf
PSMN2R6-60PSN-channel 60 V, 2.6 m standard level MOSFET in SOT785 February 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in SOT78 using TrenchMOS technology. Productdesign and manufacture has been optimized for use in battery operated power tools.2. Features and benefits High efficiency due to low switching & conduction losses Robust const
psmn2r6-60ps.pdf
isc N-Channel MOSFET Transistor PSMN2R6-60PSFEATURESDrain Current I = 150A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 2.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
psmn2r6-40ys.pdf
PSMN2R6-40YSN-channel LFPAK 40 V 2.8 m standard level MOSFETRev. 01 23 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS
psmn2r6-30ylc.pdf
PSMN2R6-30YLCN-channel 30 V 2.8m logic level MOSFET in LFPAK using NextPower technologyRev. 01 2 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits
psmn2r6-40ys.pdf
PSMN2R6-40YSN-channel LFPAK 40 V 2.8 m standard level MOSFETRev. 01 23 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS
psmn2r6-30ylc.pdf
PSMN2R6-30YLCN-channel 30 V 2.8m logic level MOSFET in LFPAK using NextPower technologyRev. 01 2 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
