PSMN2R6-60PS MOSFET. Datasheet pdf. Equivalent

   Type Designator: PSMN2R6-60PS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 326 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 150 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 140 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 968 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
   Package: TO-220AB

PSMN2R6-60PS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

PSMN2R6-60PS Datasheet (PDF)

..1. Size:253K nxp
psmn2r6-60ps.pdf

PSMN2R6-60PSN-channel 60 V, 2.6 m standard level MOSFET in SOT785 February 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in SOT78 using TrenchMOS technology. Productdesign and manufacture has been optimized for use in battery operated power tools.2. Features and benefits High efficiency due to low switching & conduction losses Robust const

..2. Size:261K inchange semiconductor
psmn2r6-60ps.pdf

isc N-Channel MOSFET Transistor PSMN2R6-60PSFEATURESDrain Current I = 150A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 2.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

6.1. Size:221K philips
psmn2r6-40ys.pdf

PSMN2R6-40YSN-channel LFPAK 40 V 2.8 m standard level MOSFETRev. 01 23 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS

6.2. Size:341K philips
psmn2r6-30ylc.pdf

PSMN2R6-30YLCN-channel 30 V 2.8m logic level MOSFET in LFPAK using NextPower technologyRev. 01 2 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits

6.3. Size:728K nxp
psmn2r6-40ys.pdf