PSMN3R0-30MLC Todos los transistores

 

PSMN3R0-30MLC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PSMN3R0-30MLC
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 88 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 70 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.15 V
   Qgⓘ - Carga de la puerta: 34.8 nC
   trⓘ - Tiempo de subida: 27.2 nS
   Cossⓘ - Capacitancia de salida: 480 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00315 Ohm
   Paquete / Cubierta: LFPAK33

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PSMN3R0-30MLC Datasheet (PDF)

 ..1. Size:369K  nxp
psmn3r0-30mlc.pdf

PSMN3R0-30MLC
PSMN3R0-30MLC

PSMN3R0-30MLCN-channel 30 V 3.15 m logic level MOSFET in LFPAK33 using NextPower TechnologyRev. 4 15 June 2012 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment1.2 Features and bene

 4.1. Size:237K  philips
psmn3r0-30yl.pdf

PSMN3R0-30MLC
PSMN3R0-30MLC

PSMN3R0-30YLN-channel 30 V 3 m logic level MOSFET in LFPAKRev. 04 10 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefit

 4.2. Size:286K  nxp
psmn3r0-30yld.pdf

PSMN3R0-30MLC
PSMN3R0-30MLC

PSMN3R0-30YLDN-channel 30 V, 3.0 m logic level MOSFET in LFPAK56using NextPowerS3 Technology18 February 2014 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising NXPs unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSFET

 4.3. Size:823K  nxp
psmn3r0-30yl.pdf

PSMN3R0-30MLC
PSMN3R0-30MLC

PSMN3R0-30YLN-channel 30 V 3 m logic level MOSFET in LFPAKRev. 04 10 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefit

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