PSMN3R0-30MLC Todos los transistores

 

PSMN3R0-30MLC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PSMN3R0-30MLC
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 88 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 70 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 27.2 nS
   Cossⓘ - Capacitancia de salida: 480 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00315 Ohm
   Paquete / Cubierta: LFPAK33
 

 Búsqueda de reemplazo de PSMN3R0-30MLC MOSFET

   - Selección ⓘ de transistores por parámetros

 

PSMN3R0-30MLC Datasheet (PDF)

 ..1. Size:369K  nxp
psmn3r0-30mlc.pdf pdf_icon

PSMN3R0-30MLC

PSMN3R0-30MLCN-channel 30 V 3.15 m logic level MOSFET in LFPAK33 using NextPower TechnologyRev. 4 15 June 2012 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment1.2 Features and bene

 4.1. Size:237K  philips
psmn3r0-30yl.pdf pdf_icon

PSMN3R0-30MLC

PSMN3R0-30YLN-channel 30 V 3 m logic level MOSFET in LFPAKRev. 04 10 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefit

 4.2. Size:286K  nxp
psmn3r0-30yld.pdf pdf_icon

PSMN3R0-30MLC

PSMN3R0-30YLDN-channel 30 V, 3.0 m logic level MOSFET in LFPAK56using NextPowerS3 Technology18 February 2014 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising NXPs unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSFET

 4.3. Size:823K  nxp
psmn3r0-30yl.pdf pdf_icon

PSMN3R0-30MLC

PSMN3R0-30YLN-channel 30 V 3 m logic level MOSFET in LFPAKRev. 04 10 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefit

Otros transistores... PSMN2R4-30YLD , PSMN2R5-60PL , PSMN2R6-60PS , PSMN2R7-30BL , PSMN2R8-25MLC , PSMN2R8-40BS , PSMN2R8-80BS , PSMN2R9-30MLC , 5N50 , PSMN3R0-30YLD , PSMN3R0-60BS , PSMN3R3-60PL , PSMN3R3-80BS , PSMN3R3-80ES , PSMN3R3-80PS , PSMN3R4-30BL , PSMN3R4-30BLE .

History: WMJ80R160S | SSM5H16TU | HFP80N75 | IRFS232 | AP2310S | KNP2404A

 

 
Back to Top

 


 
.