PSMN3R0-30MLC
MOSFET. Datasheet pdf. Equivalent
Type Designator: PSMN3R0-30MLC
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 88
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.15
V
|Id|ⓘ - Maximum Drain Current: 70
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 34.8
nC
trⓘ - Rise Time: 27.2
nS
Cossⓘ -
Output Capacitance: 480
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00315
Ohm
Package:
LFPAK33
PSMN3R0-30MLC
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PSMN3R0-30MLC
Datasheet (PDF)
..1. Size:369K nxp
psmn3r0-30mlc.pdf
PSMN3R0-30MLCN-channel 30 V 3.15 m logic level MOSFET in LFPAK33 using NextPower TechnologyRev. 4 15 June 2012 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment1.2 Features and bene
4.1. Size:237K philips
psmn3r0-30yl.pdf
PSMN3R0-30YLN-channel 30 V 3 m logic level MOSFET in LFPAKRev. 04 10 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefit
4.2. Size:286K nxp
psmn3r0-30yld.pdf
PSMN3R0-30YLDN-channel 30 V, 3.0 m logic level MOSFET in LFPAK56using NextPowerS3 Technology18 February 2014 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising NXPs unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSFET
4.3. Size:823K nxp
psmn3r0-30yl.pdf
PSMN3R0-30YLN-channel 30 V 3 m logic level MOSFET in LFPAKRev. 04 10 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefit
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