PSMN3R0-30MLC Specs and Replacement
Type Designator: PSMN3R0-30MLC
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 88 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 27.2 nS
Cossⓘ - Output Capacitance: 480 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00315 Ohm
Package: LFPAK33
PSMN3R0-30MLC substitution
- MOSFET ⓘ Cross-Reference Search
PSMN3R0-30MLC datasheet
psmn3r0-30mlc.pdf
PSMN3R0-30MLC N-channel 30 V 3.15 m logic level MOSFET in LFPAK33 using NextPower Technology Rev. 4 15 June 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment 1.2 Features and bene... See More ⇒
psmn3r0-30yl.pdf
PSMN3R0-30YL N-channel 30 V 3 m logic level MOSFET in LFPAK Rev. 04 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefit... See More ⇒
psmn3r0-30yld.pdf
PSMN3R0-30YLD N-channel 30 V, 3.0 m logic level MOSFET in LFPAK56 using NextPowerS3 Technology 18 February 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFET... See More ⇒
psmn3r0-30yl.pdf
PSMN3R0-30YL N-channel 30 V 3 m logic level MOSFET in LFPAK Rev. 04 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefit... See More ⇒
Detailed specifications: PSMN2R4-30YLD, PSMN2R5-60PL, PSMN2R6-60PS, PSMN2R7-30BL, PSMN2R8-25MLC, PSMN2R8-40BS, PSMN2R8-80BS, PSMN2R9-30MLC, IRFP064N, PSMN3R0-30YLD, PSMN3R0-60BS, PSMN3R3-60PL, PSMN3R3-80BS, PSMN3R3-80ES, PSMN3R3-80PS, PSMN3R4-30BL, PSMN3R4-30BLE
Keywords - PSMN3R0-30MLC MOSFET specs
PSMN3R0-30MLC cross reference
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PSMN3R0-30MLC substitution
PSMN3R0-30MLC replacement
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