PSMN3R0-30MLC. Аналоги и основные параметры
Наименование производителя: PSMN3R0-30MLC
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 88 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 70 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 27.2 ns
Cossⓘ - Выходная емкость: 480 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.00315 Ohm
Тип корпуса: LFPAK33
Аналог (замена) для PSMN3R0-30MLC
- подборⓘ MOSFET транзистора по параметрам
PSMN3R0-30MLC даташит
psmn3r0-30mlc.pdf
PSMN3R0-30MLC N-channel 30 V 3.15 m logic level MOSFET in LFPAK33 using NextPower Technology Rev. 4 15 June 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment 1.2 Features and bene
psmn3r0-30yl.pdf
PSMN3R0-30YL N-channel 30 V 3 m logic level MOSFET in LFPAK Rev. 04 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefit
psmn3r0-30yld.pdf
PSMN3R0-30YLD N-channel 30 V, 3.0 m logic level MOSFET in LFPAK56 using NextPowerS3 Technology 18 February 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFET
psmn3r0-30yl.pdf
PSMN3R0-30YL N-channel 30 V 3 m logic level MOSFET in LFPAK Rev. 04 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefit
Другие MOSFET... PSMN2R4-30YLD , PSMN2R5-60PL , PSMN2R6-60PS , PSMN2R7-30BL , PSMN2R8-25MLC , PSMN2R8-40BS , PSMN2R8-80BS , PSMN2R9-30MLC , IRFP064N , PSMN3R0-30YLD , PSMN3R0-60BS , PSMN3R3-60PL , PSMN3R3-80BS , PSMN3R3-80ES , PSMN3R3-80PS , PSMN3R4-30BL , PSMN3R4-30BLE .
History: KP727B | IRFSL4127PBF | APM4101K
History: KP727B | IRFSL4127PBF | APM4101K
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Список транзисторов
Обновления
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