PSMN3R9-60XS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PSMN3R9-60XS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 55 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 103 nC
   trⓘ - Tiempo de subida: 71.2 nS
   Cossⓘ - Capacitancia de salida: 743 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
   Paquete / Cubierta: TO-220F

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PSMN3R9-60XS Datasheet (PDF)

..1. Size:232K nxp
psmn3r9-60xs.pdf

PSMN3R9-60XSN-channel 60 V, 4.0 m standard level MOSFET in TO220F(SOT186A)12 September 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in TO220F (SOT186A) package qualified to175 C. This product is designed and qualified for use in a wide range of industrial,communications and domestic equipment.2. Features and benefits High efficiency due

4.1. Size:249K nxp
psmn3r9-60ps.pdf

PSMN3R9-60PSN-channel 60 V, 3.9 m standard level MOSFET in SOT781 February 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in SOT78 using TrenchMOS technology. Productdesign and manufacture has been optimized for use in battery operated power tools.2. Features and benefits High efficiency due to low switching & conduction losses Robust const

4.2. Size:261K inchange semiconductor
psmn3r9-60ps.pdf

isc N-Channel MOSFET Transistor PSMN3R9-60PSFEATURESDrain Current I = 130A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 3.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

6.1. Size:365K nxp
psmn3r9-25mlc.pdf

PSMN3R9-25MLCN-channel 25 V 4.15 m logic level MOSFET in LFPAK33 using NextPower TechnologyRev. 4 15 June 2012 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and ben

6.2. Size:294K nxp
psmn3r9-100ysf.pdf

PSMN3R9-100YSFNextPower 100 V, 4.3 m N-channel MOSFET in LFPAK56package17 February 2020 Preliminary data sheet1. General descriptionNextPower 100 V, standard level gate drive MOSFET. Qualified to 150 C and recommended forindustrial and consumer applications.2. Features and benefits Low Qrr for higher efficiency and lower spiking 120 A ID (max) demonstrated contin

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