All MOSFET. PSMN3R9-60XS Datasheet

 

PSMN3R9-60XS MOSFET. Datasheet pdf. Equivalent


   Type Designator: PSMN3R9-60XS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 103 nC
   trⓘ - Rise Time: 71.2 nS
   Cossⓘ - Output Capacitance: 743 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO-220F

 PSMN3R9-60XS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PSMN3R9-60XS Datasheet (PDF)

 ..1. Size:232K  nxp
psmn3r9-60xs.pdf

PSMN3R9-60XS PSMN3R9-60XS

PSMN3R9-60XSN-channel 60 V, 4.0 m standard level MOSFET in TO220F(SOT186A)12 September 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in TO220F (SOT186A) package qualified to175 C. This product is designed and qualified for use in a wide range of industrial,communications and domestic equipment.2. Features and benefits High efficiency due

 4.1. Size:249K  nxp
psmn3r9-60ps.pdf

PSMN3R9-60XS PSMN3R9-60XS

PSMN3R9-60PSN-channel 60 V, 3.9 m standard level MOSFET in SOT781 February 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in SOT78 using TrenchMOS technology. Productdesign and manufacture has been optimized for use in battery operated power tools.2. Features and benefits High efficiency due to low switching & conduction losses Robust const

 4.2. Size:261K  inchange semiconductor
psmn3r9-60ps.pdf

PSMN3R9-60XS PSMN3R9-60XS

isc N-Channel MOSFET Transistor PSMN3R9-60PSFEATURESDrain Current I = 130A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 3.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

 6.1. Size:365K  nxp
psmn3r9-25mlc.pdf

PSMN3R9-60XS PSMN3R9-60XS

PSMN3R9-25MLCN-channel 25 V 4.15 m logic level MOSFET in LFPAK33 using NextPower TechnologyRev. 4 15 June 2012 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and ben

 6.2. Size:294K  nxp
psmn3r9-100ysf.pdf

PSMN3R9-60XS PSMN3R9-60XS

PSMN3R9-100YSFNextPower 100 V, 4.3 m N-channel MOSFET in LFPAK56package17 February 2020 Preliminary data sheet1. General descriptionNextPower 100 V, standard level gate drive MOSFET. Qualified to 150 C and recommended forindustrial and consumer applications.2. Features and benefits Low Qrr for higher efficiency and lower spiking 120 A ID (max) demonstrated contin

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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