PSMN3R9-60XS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: PSMN3R9-60XS
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 55 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 75 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 103 nC
Время нарастания (tr): 71.2 ns
Выходная емкость (Cd): 743 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.004 Ohm
Тип корпуса: TO-220F
Аналог (замена) для PSMN3R9-60XS
PSMN3R9-60XS Datasheet (PDF)
psmn3r9-60xs.pdf
PSMN3R9-60XSN-channel 60 V, 4.0 m standard level MOSFET in TO220F(SOT186A)12 September 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in TO220F (SOT186A) package qualified to175 C. This product is designed and qualified for use in a wide range of industrial,communications and domestic equipment.2. Features and benefits High efficiency due
psmn3r9-60ps.pdf
PSMN3R9-60PSN-channel 60 V, 3.9 m standard level MOSFET in SOT781 February 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in SOT78 using TrenchMOS technology. Productdesign and manufacture has been optimized for use in battery operated power tools.2. Features and benefits High efficiency due to low switching & conduction losses Robust const
psmn3r9-60ps.pdf
isc N-Channel MOSFET Transistor PSMN3R9-60PSFEATURESDrain Current I = 130A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 3.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
psmn3r9-25mlc.pdf
PSMN3R9-25MLCN-channel 25 V 4.15 m logic level MOSFET in LFPAK33 using NextPower TechnologyRev. 4 15 June 2012 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and ben
psmn3r9-100ysf.pdf
PSMN3R9-100YSFNextPower 100 V, 4.3 m N-channel MOSFET in LFPAK56package17 February 2020 Preliminary data sheet1. General descriptionNextPower 100 V, standard level gate drive MOSFET. Qualified to 150 C and recommended forindustrial and consumer applications.2. Features and benefits Low Qrr for higher efficiency and lower spiking 120 A ID (max) demonstrated contin
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