PSMN4R6-100XS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN4R6-100XS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 63.8 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 70.4 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 40 nS
Cossⓘ - Capacitancia de salida: 660 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0046 Ohm
Encapsulados: SOT186A
Búsqueda de reemplazo de PSMN4R6-100XS MOSFET
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PSMN4R6-100XS datasheet
psmn4r6-100xs.pdf
PSMN4R6-100XS N-channel 100V 4.6 m standard level MOSFET in TO220F (SOT186A) Rev. 1 3 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefit
psmn4r6-60ps.pdf
PSMN4R6-60PS N-channel 60 V, 4.6 m standard level MOSFET in TO220 Rev. 02 1 November 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High effi
psmn4r6-60bs.pdf
PSMN4R6-60BS N-channel 60 V, 4.4 m standard level MOSFET in D2PAK Rev. 1 22 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High effic
psmn4r6-60ps.pdf
PSMN4R6-60PS N-channel 60 V, 4.6 m standard level MOSFET in TO220 Rev. 3 18 April 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High effi
Otros transistores... PSMN4R2-60PL , PSMN4R3-100ES , PSMN4R3-100PS , PSMN4R3-30BL , PSMN4R3-80BS , PSMN4R4-30MLC , PSMN4R4-80BS , PSMN4R5-40BS , IRFB4115 , PSMN4R6-60BS , PSMN4R8-100BSE , PSMN4R8-100PSE , PSMN5R0-100XS , PSMN5R0-80BS , PSMN5R6-100BS , PSMN6R0-30YLD , PSMN6R1-30YLD .
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