PSMN4R6-100XS - Даташиты. Аналоги. Основные параметры
Наименование производителя: PSMN4R6-100XS
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 63.8 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 70.4 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 40 ns
Cossⓘ - Выходная емкость: 660 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0046 Ohm
Тип корпуса: SOT186A
Аналог (замена) для PSMN4R6-100XS
PSMN4R6-100XS Datasheet (PDF)
psmn4r6-100xs.pdf
PSMN4R6-100XSN-channel 100V 4.6 m standard level MOSFET in TO220F (SOT186A)Rev. 1 3 July 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefit
psmn4r6-60ps.pdf
PSMN4R6-60PSN-channel 60 V, 4.6 m standard level MOSFET in TO220Rev. 02 1 November 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effi
psmn4r6-60bs.pdf
PSMN4R6-60BSN-channel 60 V, 4.4 m standard level MOSFET in D2PAKRev. 1 22 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effic
psmn4r6-60ps.pdf
PSMN4R6-60PSN-channel 60 V, 4.6 m standard level MOSFET in TO220Rev. 3 18 April 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effi
Другие MOSFET... PSMN4R2-60PL , PSMN4R3-100ES , PSMN4R3-100PS , PSMN4R3-30BL , PSMN4R3-80BS , PSMN4R4-30MLC , PSMN4R4-80BS , PSMN4R5-40BS , IRFB4115 , PSMN4R6-60BS , PSMN4R8-100BSE , PSMN4R8-100PSE , PSMN5R0-100XS , PSMN5R0-80BS , PSMN5R6-100BS , PSMN6R0-30YLD , PSMN6R1-30YLD .
History: STW48NM60N | F20W60C3 | APT58M50J | STM8020 | SML40B28 | SML40C15N | 2SK1023-01
History: STW48NM60N | F20W60C3 | APT58M50J | STM8020 | SML40B28 | SML40C15N | 2SK1023-01
Список транзисторов
Обновления
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