All MOSFET. PSMN4R6-100XS Datasheet

 

PSMN4R6-100XS Datasheet and Replacement


   Type Designator: PSMN4R6-100XS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 63.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70.4 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 660 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm
   Package: SOT186A
 

 PSMN4R6-100XS substitution

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PSMN4R6-100XS Datasheet (PDF)

 ..1. Size:215K  nxp
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PSMN4R6-100XS

PSMN4R6-100XSN-channel 100V 4.6 m standard level MOSFET in TO220F (SOT186A)Rev. 1 3 July 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefit

 6.1. Size:226K  philips
psmn4r6-60ps.pdf pdf_icon

PSMN4R6-100XS

PSMN4R6-60PSN-channel 60 V, 4.6 m standard level MOSFET in TO220Rev. 02 1 November 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effi

 6.2. Size:210K  nxp
psmn4r6-60bs.pdf pdf_icon

PSMN4R6-100XS

PSMN4R6-60BSN-channel 60 V, 4.4 m standard level MOSFET in D2PAKRev. 1 22 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effic

 6.3. Size:971K  nxp
psmn4r6-60ps.pdf pdf_icon

PSMN4R6-100XS

PSMN4R6-60PSN-channel 60 V, 4.6 m standard level MOSFET in TO220Rev. 3 18 April 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effi

Datasheet: PSMN4R2-60PL , PSMN4R3-100ES , PSMN4R3-100PS , PSMN4R3-30BL , PSMN4R3-80BS , PSMN4R4-30MLC , PSMN4R4-80BS , PSMN4R5-40BS , IRFP250N , PSMN4R6-60BS , PSMN4R8-100BSE , PSMN4R8-100PSE , PSMN5R0-100XS , PSMN5R0-80BS , PSMN5R6-100BS , PSMN6R0-30YLD , PSMN6R1-30YLD .

History: APT1004RBNR | STB70NF03LT4 | HFP5N80 | STP18N60DM2 | UPA2709GR | NP90N04VLK | SWD106R95VS

Keywords - PSMN4R6-100XS MOSFET datasheet

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