PSMN7R0-30MLC Todos los transistores

PSMN7R0-30MLC N-channel 30 V 7 m logic level MOSFET in LFPAK33 using NextPower Technology Rev. 4 15 June 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefi

PSMN7R0-30YL N-channel 30 V 7 m logic level MOSFET in LFPAK Rev. 04 9 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits

PSMN7R0-30YL N-channel 30 V 7 m logic level MOSFET in LFPAK Rev. 04 9 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits

PSMN7R0-30YLC N-channel 30 V 7.1 m logic level MOSFET in LFPAK using NextPower technology Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics QGD gate-drain charge VGS =4.5V; ID =20A; - 2.5 - nC VDS =15V; see Figure 14; see Figure 15 QG(tot) total gate charge VGS =4.5V; ID =20A; - 7.9 - nC VDS =15V; see Figure 14; see Fi