PSMN7R0-30MLC Specs and Replacement
Type Designator: PSMN7R0-30MLC
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 57 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 67 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15.4 nS
Cossⓘ - Output Capacitance: 248 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: LFPAK33
PSMN7R0-30MLC substitution
- MOSFET ⓘ Cross-Reference Search
PSMN7R0-30MLC datasheet
psmn7r0-30mlc.pdf
PSMN7R0-30MLC N-channel 30 V 7 m logic level MOSFET in LFPAK33 using NextPower Technology Rev. 4 15 June 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefi... See More ⇒
psmn7r0-30yl.pdf
PSMN7R0-30YL N-channel 30 V 7 m logic level MOSFET in LFPAK Rev. 04 9 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits... See More ⇒
psmn7r0-30yl.pdf
PSMN7R0-30YL N-channel 30 V 7 m logic level MOSFET in LFPAK Rev. 04 9 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits... See More ⇒
psmn7r0-30ylc.pdf
PSMN7R0-30YLC N-channel 30 V 7.1 m logic level MOSFET in LFPAK using NextPower technology Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics QGD gate-drain charge VGS =4.5V; ID =20A; - 2.5 - nC VDS =15V; see Figure 14; see Figure 15 QG(tot) total gate charge VGS =4.5V; ID =20A; - 7.9 - nC VDS =15V; see Figure 14; see Fi... See More ⇒
Detailed specifications: PSMN5R0-80BS, PSMN5R6-100BS, PSMN6R0-30YLD, PSMN6R1-30YLD, PSMN6R3-120ES, PSMN6R3-120PS, PSMN6R5-80BS, PSMN7R0-100BS, IRF4905, PSMN7R5-30MLD, PSMN7R5-30YLD, PSMN7R6-100BSE, PSMN7R6-60BS, PSMN7R6-60XS, PSMN7R8-100PSE, PSMN7R8-120ES, PSMN7R8-120PS
Keywords - PSMN7R0-30MLC MOSFET specs
PSMN7R0-30MLC cross reference
PSMN7R0-30MLC equivalent finder
PSMN7R0-30MLC pdf lookup
PSMN7R0-30MLC substitution
PSMN7R0-30MLC replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
🌐 : EN ES РУ
LIST
Last Update
MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10
Popular searches
2sc1815 transistor | 2sd718 | 2n3053 transistor | 2sc458 replacement | bc557 transistor | 2n3638 | tip127 datasheet | irlz24n
