PSMN8R0-40BS Todos los transistores

 

PSMN8R0-40BS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PSMN8R0-40BS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 86 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 77 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4.7 nS
   Cossⓘ - Capacitancia de salida: 327 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0076 Ohm
   Paquete / Cubierta: D2PAK

 Búsqueda de reemplazo de MOSFET PSMN8R0-40BS

 

Principales características: PSMN8R0-40BS

 ..1. Size:227K  nxp
psmn8r0-40bs.pdf pdf_icon

PSMN8R0-40BS

PSMN8R0-40BS N-channel 40 V 7.6 m standard level MOSFET in D2PAK Rev. 2 2 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficienc

 4.1. Size:219K  philips
psmn8r0-40ps.pdf pdf_icon

PSMN8R0-40BS

PSMN8R0-40PS N-channel 40 V 7.6 m standard level MOSFET Rev. 02 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to lo

 6.1. Size:731K  nxp
psmn8r0-80yl.pdf pdf_icon

PSMN8R0-40BS

PSMN8R0-80YL N-channel 80 V, 8 m logic level MOSFET in LFPAK56 20 October 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. 2. Features and benefits Advanced TrenchMOS provides low RDSon an

 8.1. Size:212K  philips
psmn8r3-40ys.pdf pdf_icon

PSMN8R0-40BS

PSMN8R3-40YS N-channel LFPAK 40 V 8.6 m standard level MOSFET Rev. 01 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS

Otros transistores... PSMN7R5-30MLD , PSMN7R5-30YLD , PSMN7R6-100BSE , PSMN7R6-60BS , PSMN7R6-60XS , PSMN7R8-100PSE , PSMN7R8-120ES , PSMN7R8-120PS , 13N50 , PSMN8R5-100ES , PSMN8R5-100PS , PSMN8R5-100XS , PSMN8R5-108ES , PSMN8R7-80BS , PSMN9R0-25MLC , PSMN9R5-100BS , PSMN9R8-30MLC .

History: SSM3J351R | ZVN3306FTA | MTP4411AQ8 | SUP70060E | ZVN3320FTC | PSMN7R6-60BS | ZVN4106FTA

 

 
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