PSMN8R0-40BS datasheet, аналоги, основные параметры
Наименование производителя: PSMN8R0-40BS 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 86 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 77 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 4.7 ns
Cossⓘ - Выходная емкость: 327 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0076 Ohm
Тип корпуса: D2PAK
📄📄 Копировать
Аналог (замена) для PSMN8R0-40BS
- подборⓘ MOSFET транзистора по параметрам
PSMN8R0-40BS даташит
..1. Size:227K nxp
psmn8r0-40bs.pdf 
PSMN8R0-40BS N-channel 40 V 7.6 m standard level MOSFET in D2PAK Rev. 2 2 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficienc
4.1. Size:219K philips
psmn8r0-40ps.pdf 
PSMN8R0-40PS N-channel 40 V 7.6 m standard level MOSFET Rev. 02 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to lo
6.1. Size:731K nxp
psmn8r0-80yl.pdf 
PSMN8R0-80YL N-channel 80 V, 8 m logic level MOSFET in LFPAK56 20 October 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. 2. Features and benefits Advanced TrenchMOS provides low RDSon an
8.1. Size:212K philips
psmn8r3-40ys.pdf 
PSMN8R3-40YS N-channel LFPAK 40 V 8.6 m standard level MOSFET Rev. 01 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS
8.2. Size:241K philips
psmn8r5-60ys.pdf 
PSMN8R5-60YS N-channel LFPAK 60 V, 8 m standard level MOSFET Rev. 01 22 December 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchM
8.3. Size:216K philips
psmn8r2-80ys.pdf 
PSMN8R2-80YS N-channel LFPAK 80 V 8.5 m standard level MOSFET Rev. 01 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS
8.4. Size:216K philips
psmn8r7-80ps.pdf 
PSMN8R7-80PS N-channel 80 V 8.7 m standard level MOSFET in TO-220 Rev. 02 1 November 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High effici
8.5. Size:250K nxp
psmn8r5-100esf.pdf 
PSMN8R5-100ESF NextPower 100 V, 8.8 m N-channel MOSFET in I2PAK package 10 April 2017 Product data sheet 1. General description NextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended for industrial & consumer applications. 2. Features and benefits Optimised for fast switching, low spiking, high efficiency Low QG x RDSon FOM for high efficiency
8.6. Size:228K nxp
psmn8r5-100xs.pdf 
PSMN8R5-100XS N-channel 100V 8.5 m standard level MOSFET in TO220F (SOT186A) 29 November 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Hi
8.7. Size:231K nxp
psmn8r5-108es.pdf 
PSMN8R5-108ES N-channel 108 V 8.5 m standard level MOSFET in I2PAK 13 January 2014 Product data sheet 1. General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and co
8.8. Size:719K nxp
psmn8r3-40ys.pdf 
PSMN8R3-40YS N-channel LFPAK 40 V 8.6 m standard level MOSFET Rev. 01 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS
8.9. Size:737K nxp
psmn8r5-60ys.pdf 
PSMN8R5-60YS N-channel LFPAK 60 V, 8 m standard level MOSFET 22 July 2015 Product data sheet 1. General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits Advanced TrenchMOS provides low RDSon and low gate cha
8.10. Size:292K nxp
psmn8r7-100ysf.pdf 
PSMN8R7-100YSF NextPower 100 V, 9 m N-channel MOSFET in LFPAK56 package 1 November 2017 Product data sheet 1. General description NextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended for industrial & consumer applications. 2. Features and benefits Low Qrr for higher efficiency and lower spiking Qualified to 175 C Low QG x RDSon FOM for
8.11. Size:220K nxp
psmn8r5-100es.pdf 
PSMN8R5-100ES N-channel 100 V 8.5 m standard level MOSFET in I2PAK 11 October 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due t
8.12. Size:258K nxp
psmn8r5-100psf.pdf 
PSMN8R5-100PSF NextPower 100 V, 8.7 m N-channel MOSFET in TO220 package 10 April 2017 Product data sheet 1. General description NextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended for industrial & consumer applications. 2. Features and benefits Optimised for fast switching, low spiking, high efficiency Low QG x RDSon FOM for high efficiency
8.13. Size:723K nxp
psmn8r2-80ys.pdf 
PSMN8R2-80YS N-channel LFPAK 80 V 8.5 m standard level MOSFET Rev. 01 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS
8.14. Size:225K nxp
psmn8r7-80bs.pdf 
PSMN8R7-80BS N-channel 80 V 8.7 m standard level MOSFET in D2PAK Rev. 2 2 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficienc
8.15. Size:250K nxp
psmn8r5-100ps.pdf 
PSMN8R5-100PS N-channel 100 V 8.5 m standard level MOSFET in TO220 17 October 2013 Product data sheet 1. General description Standard level N-channel MOSFET in a TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and co
8.16. Size:301K nxp
psmn8r5-40msd.pdf 
PSMN8R5-40MSD N-channel 40 V, 8.5 m , standard level MOSFET in LFPAK33 using NextPower-S3 technology 10 February 2020 Product data sheet 1. General description 60 A, standard level N-channel enhancement mode MOSFET in 175 C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching
Другие IGBT... PSMN7R5-30MLD, PSMN7R5-30YLD, PSMN7R6-100BSE, PSMN7R6-60BS, PSMN7R6-60XS, PSMN7R8-100PSE, PSMN7R8-120ES, PSMN7R8-120PS, SPP20N60C3, PSMN8R5-100ES, PSMN8R5-100PS, PSMN8R5-100XS, PSMN8R5-108ES, PSMN8R7-80BS, PSMN9R0-25MLC, PSMN9R5-100BS, PSMN9R8-30MLC
